Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

doi:10.1088/1674-1056/28/7/077104

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 77104-077104.doi: 10.1088/1674-1056/28/7/077104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

Yanfeng Ge(盖彦峰), Yong Liu(刘永)

State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China

收稿日期:2019-01-07 修回日期:2019-05-02 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Yong Liu E-mail:yongliu@ysu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11747054), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2018M631760), the Project of Hebei Educational Department, China (Grant Nos. ZD2018015 and QN2018012), and the Advanced Postdoctoral Programs of Hebei Province, China (Grant No. B2017003004).

Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

Yanfeng Ge(盖彦峰), Yong Liu(刘永)

State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China

Received:2019-01-07 Revised:2019-05-02 Online:2019-07-05 Published:2019-07-05
Contact: Yong Liu E-mail:yongliu@ysu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11747054), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2018M631760), the Project of Hebei Educational Department, China (Grant Nos. ZD2018015 and QN2018012), and the Advanced Postdoctoral Programs of Hebei Province, China (Grant No. B2017003004).

摘要/Abstract

摘要：

Tin monoxide (SnO) is an interesting two-dimensional material because it is a rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically investigate the effects of different layer structures and strains on the electron-phonon coupling and phonon-limited mobility of SnO. The A_2u phonon mode in the high-frequency region is the main contributor to the coupling with electrons for different layer structures. Moreover, the orbital hybridization of Sn atoms existing only in the bilayer structure changes the conduction band edge and conspicuously decreases the electron-phonon coupling, and thus the electronic transport performance of the bilayer is superior to that of other layers. In addition, the compressive strain of ε=-1.0% in the monolayer structure results in a conduction band minimum (CBM) consisting of two valleys at the Γ point and along the M-Γ line, and also leads to the intervalley electronic scattering assisted by the E_g(-1) mode. However, the electron-phonon coupling regionally transferring from high frequency A_2u to low frequency E_g(-1) results in little change of mobility.

关键词: two-dimensional materials, tin monoxide, electronic transport, electron-phonon coupling

Abstract:

Key words: two-dimensional materials, tin monoxide, electronic transport, electron-phonon coupling

中图分类号: (Electrical properties)

51.50.+v

63.20.kd (Phonon-electron interactions) 63.20.dk (First-principles theory) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

盖彦峰, 刘永. Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide[J]. 中国物理B, 2019, 28(7): 77104-077104.

Yanfeng Ge(盖彦峰), Yong Liu(刘永). Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide[J]. Chin. Phys. B, 2019, 28(7): 77104-077104.

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Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

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