中国物理B ›› 2019, Vol. 28 ›› Issue (4): 48801-048801.doi: 10.1088/1674-1056/28/4/048801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation

Zhen-Wu Jiang(姜振武), Shou-Shuai Gao(高守帅), Si-Yu Wang(王思宇), Dong-Xiao Wang(王东潇), Peng Gao(高鹏), Qiang Sun(孙强), Zhi-Qiang Zhou(周志强), Wei Liu(刘玮), Yun Sun(孙云), Yi Zhang(张毅)   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China;
    2 Tianjin Institute of Power Source, Tianjin 300384, China
  • 收稿日期:2019-01-06 修回日期:2019-01-31 出版日期:2019-04-05 发布日期:2019-04-05
  • 通讯作者: Yi Zhang E-mail:yizhang@nankai.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572132, 61674082, and 61774089), the National Key Research and Development Program of China (Grant No. 2018YFB1500202), the Tianjin Natural Science Foundation of Key Project of China (Grant Nos. 16JCZDJC30700 and 18JCZDJC31200), and the 111 Project, China (Grant No. B16027).

Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation

Zhen-Wu Jiang(姜振武)1, Shou-Shuai Gao(高守帅)1, Si-Yu Wang(王思宇)1, Dong-Xiao Wang(王东潇)1, Peng Gao(高鹏)2, Qiang Sun(孙强)2, Zhi-Qiang Zhou(周志强)1, Wei Liu(刘玮)1, Yun Sun(孙云)1, Yi Zhang(张毅)1   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China;
    2 Tianjin Institute of Power Source, Tianjin 300384, China
  • Received:2019-01-06 Revised:2019-01-31 Online:2019-04-05 Published:2019-04-05
  • Contact: Yi Zhang E-mail:yizhang@nankai.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572132, 61674082, and 61774089), the National Key Research and Development Program of China (Grant No. 2018YFB1500202), the Tianjin Natural Science Foundation of Key Project of China (Grant Nos. 16JCZDJC30700 and 18JCZDJC31200), and the 111 Project, China (Grant No. B16027).

摘要:

Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu2ZnSnSe4 p-n junction solar cell and the effect of In2S3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS software. By optimizing the band gap structure between Zn(O,S) buffer layer and Cu2ZnSnSe4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV-0.4 eV for S/(S+O)=0.6-0.8 in Zn(O,S). The In2S3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).

关键词: CZTSe, band alignment, double buffer layer, simulation

Abstract:

Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu2ZnSnSe4 p-n junction solar cell and the effect of In2S3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS software. By optimizing the band gap structure between Zn(O,S) buffer layer and Cu2ZnSnSe4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV-0.4 eV for S/(S+O)=0.6-0.8 in Zn(O,S). The In2S3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).

Key words: CZTSe, band alignment, double buffer layer, simulation

中图分类号:  (Solar cells (photovoltaics))

  • 88.40.H-
88.30.gg (Design and simulation) 88.40.hj (Efficiency and performance of solar cells) 88.40.jn (Thin film Cu-based I-III-VI2 solar cells)