中国物理B ›› 2019, Vol. 28 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/28/3/038502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Yan-Li Wang(王燕丽), Pei-Xian Li(李培咸), Sheng-Rui Xu(许晟瑞), Xiao-Wei Zhou(周小伟), Xin-Yu Zhang(张心禹), Si-Yu Jiang(姜思宇), Ru-Xue Huang(黄茹雪), Yang Liu(刘洋), Ya-Li Zi(訾亚丽), Jin-Xing Wu(吴金星), Yue Hao(郝跃)
Yan-Li Wang(王燕丽)1, Pei-Xian Li(李培咸)1, Sheng-Rui Xu(许晟瑞)2, Xiao-Wei Zhou(周小伟)1, Xin-Yu Zhang(张心禹)1, Si-Yu Jiang(姜思宇)1, Ru-Xue Huang(黄茹雪)1, Yang Liu(刘洋)1, Ya-Li Zi(訾亚丽)1, Jin-Xing Wu(吴金星)1, Yue Hao(郝跃)2
摘要:
The novel AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) with double superlattice structure (DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice (SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the p-type regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5% and 37.9% in the output power and external quantum efficiency at 120 mA appear in the device with double superlattice structure.
中图分类号: (Light-emitting devices)