Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

doi:10.1088/1674-1056/28/2/027303

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 27303-027303.doi: 10.1088/1674-1056/28/2/027303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽)

1 College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Electronic Devices Institute, Nanjing 210016, China;
3 College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

收稿日期:2018-08-28 修回日期:2018-11-27 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Ping Han, Xiao-Li Ji E-mail:hanping@nju.edu.cn;xji@nju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400402).

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Jin-Lan Li(李金岚)¹, Yun Li(李赟)², Ling Wang(汪玲)², Yue Xu(徐跃)³, Feng Yan(闫锋)¹, Ping Han(韩平)¹, Xiao-Li Ji(纪小丽)¹

1 College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Electronic Devices Institute, Nanjing 210016, China;
3 College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Received:2018-08-28 Revised:2018-11-27 Online:2019-02-05 Published:2019-02-05
Contact: Ping Han, Xiao-Li Ji E-mail:hanping@nju.edu.cn;xji@nju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400402).

摘要/Abstract

摘要： In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage (I-V) characteristics and deep-level transient spectra (DLTS). Two Schottky barrier heights (SBHs) with different temperature dependences are found in Ni/4H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_1/2 and Ti(c)^a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)^{rm a} defect has a strong influence on the electrical and thermal properties of the 4H-SiC Schottky diode.

关键词: 4H-SiC Schottky diodes, Schottky barrier heights, deep defects, DLTS

Abstract: In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage (I-V) characteristics and deep-level transient spectra (DLTS). Two Schottky barrier heights (SBHs) with different temperature dependences are found in Ni/4H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_1/2 and Ti(c)^a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)^{rm a} defect has a strong influence on the electrical and thermal properties of the 4H-SiC Schottky diode.

Key words: 4H-SiC Schottky diodes, Schottky barrier heights, deep defects, DLTS

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

61.72.J- (Point defects and defect clusters) 71.55.-i (Impurity and defect levels) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303.

Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽). Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. Chin. Phys. B, 2019, 28(2): 27303-027303.

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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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