Theoretical analytic model for RESURF AlGaN/GaN HEMTs

doi:10.1088/1674-1056/28/2/027302

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 27302-027302.doi: 10.1088/1674-1056/28/2/027302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂)

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2018-10-26 修回日期:2018-12-03 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Hao Wu, Bao-Xing Duan E-mail:haowu1701@163.com;bxduan@163.com
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2015CB351906), the National Natural Science Foundation of China (Grant No. 61774114), the Key Program of the National Natural Science Foundation of China (Grant No. 61334002), and the 111 Project, China (Grant No. B12026).

Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂)

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2018-10-26 Revised:2018-12-03 Online:2019-02-05 Published:2019-02-05
Contact: Hao Wu, Bao-Xing Duan E-mail:haowu1701@163.com;bxduan@163.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2015CB351906), the National Natural Science Foundation of China (Grant No. 61774114), the Key Program of the National Natural Science Foundation of China (Grant No. 61334002), and the 111 Project, China (Grant No. B12026).

摘要/Abstract

摘要： In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.

关键词: RESURF AlGaN/GaN HEMTs, two-dimensional analytic model, potential distribution, electric field distribution

Abstract: In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.

Key words: RESURF AlGaN/GaN HEMTs, two-dimensional analytic model, potential distribution, electric field distribution

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

吴浩, 段宝兴, 杨珞云, 杨银堂. Theoretical analytic model for RESURF AlGaN/GaN HEMTs[J]. 中国物理B, 2019, 28(2): 27302-027302.

Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂). Theoretical analytic model for RESURF AlGaN/GaN HEMTs[J]. Chin. Phys. B, 2019, 28(2): 27302-027302.

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Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Theoretical analytic model for RESURF AlGaN/GaN HEMTs

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