中国物理B ›› 2019, Vol. 28 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/ab4d49

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)   

  1. 1 School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2019-06-04 修回日期:2019-09-20 出版日期:2019-11-05 发布日期:2019-11-05
  • 通讯作者: Hong-Liang Lv, Hai-Qiao Ni E-mail:hllv@mail.xidian.edu.cn;nihq@semi.ac.cn
  • 基金资助:
    Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), the National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program, China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant No. 61505196).

Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

Jing Zhang(张静)1,2, Hong-Liang Lv(吕红亮)1, Hai-Qiao Ni(倪海桥)2, Shi-Zheng Yang(杨施政)1, Xiao-Ran Cui(崔晓然)1,2, Zhi-Chuan Niu(牛智川)2, Yi-Men Zhang(张义门)1, Yu-Ming Zhang(张玉明)1   

  1. 1 School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2019-06-04 Revised:2019-09-20 Online:2019-11-05 Published:2019-11-05
  • Contact: Hong-Liang Lv, Hai-Qiao Ni E-mail:hllv@mail.xidian.edu.cn;nihq@semi.ac.cn
  • Supported by:
    Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), the National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program, China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant No. 61505196).

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摘要： The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), reciprocal space map (RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.

关键词: Si, sticking coefficients, growth temperature, GaAsxSb1-x metamorphic buffer

Abstract: The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), reciprocal space map (RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.

Key words: Si, sticking coefficients, growth temperature, GaAsxSb1-x metamorphic buffer

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.70.-q (Methods of materials testing and analysis)