中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/27/9/097201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明)   

  1. 1 School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2018-03-05 修回日期:2018-06-12 出版日期:2018-09-05 发布日期:2018-09-05
  • 通讯作者: Hongliang Lv E-mail:hllv@mail.xidian.edu.cn
  • 基金资助:

    Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4).

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

Jing Zhang(张静)1,2, Hongliang Lv(吕红亮)1, Haiqiao Ni(倪海桥)2, Zhichuan Niu(牛智川)2, Yuming Zhang(张玉明)1   

  1. 1 School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2018-03-05 Revised:2018-06-12 Online:2018-09-05 Published:2018-09-05
  • Contact: Hongliang Lv E-mail:hllv@mail.xidian.edu.cn
  • Supported by:

    Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4).

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摘要：

In this report, the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors (HEMTs) with a gate length of 2 μ are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the InAs/AlSb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K (42560 cm2/V·s) is 2.5 times higher than its value at 300 K (16911 cm2/V·s) because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99×1012 cm-2 at 300 K to 1.7×1012 cm-2 at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ΔEc.

关键词: temperature, mobility, two-dimensional electron gas, InAs/AlSb HEMT

Abstract:

In this report, the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors (HEMTs) with a gate length of 2 μ are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the InAs/AlSb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K (42560 cm2/V·s) is 2.5 times higher than its value at 300 K (16911 cm2/V·s) because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99×1012 cm-2 at 300 K to 1.7×1012 cm-2 at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ΔEc.

Key words: temperature, mobility, two-dimensional electron gas, InAs/AlSb HEMT

中图分类号:  (Theory of electronic transport; scattering mechanisms)

  • 72.10.-d
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.05.Ea (III-V semiconductors)