中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/27/4/047301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Conductivity and band alignment of LaCrO3/SrTiO3 (111) heterostructure

Yan-Peng Hong(洪彦鹏), Xin-Xin Wang(王欣欣), Guo-Liang Qu(曲国良), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Ke-Jian Liu(刘科践), Yong-Chun Li(李永春), Chang-Min Xiong(熊昌民), Rui-Fen Dou(窦瑞芬), Lin He(何林), Jia-Cai Nie(聂家财)   

  1. Department of Physics, Beijing Normal University, Beijing 100875, China
  • 收稿日期:2017-11-02 修回日期:2018-01-08 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Jia-Cai Nie E-mail:jcnie@bnu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674031, 11474022 11474024, 11422430, and 11374035) and the National Basic Research Program of China (Grant Nos. 2014CB920903, 2013CB921701, and 2013CBA01603).

Conductivity and band alignment of LaCrO3/SrTiO3 (111) heterostructure

Yan-Peng Hong(洪彦鹏), Xin-Xin Wang(王欣欣), Guo-Liang Qu(曲国良), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Ke-Jian Liu(刘科践), Yong-Chun Li(李永春), Chang-Min Xiong(熊昌民), Rui-Fen Dou(窦瑞芬), Lin He(何林), Jia-Cai Nie(聂家财)   

  1. Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:2017-11-02 Revised:2018-01-08 Online:2018-04-05 Published:2018-04-05
  • Contact: Jia-Cai Nie E-mail:jcnie@bnu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674031, 11474022 11474024, 11422430, and 11374035) and the National Basic Research Program of China (Grant Nos. 2014CB920903, 2013CB921701, and 2013CBA01603).

摘要:

In this work, we investigate the electrical transport property and electronic structure of oxide heterostructure LaCrO3/SrTiO3 (111). The interface grown under relatively low oxygen partial pressure is found to be metallic with a conducting critical thickness of 11 unit cells of LaCrO3. This criticality is also observed by x-ray photoelectron spectroscopy, in which the Ti3+ signal intensity at the spectrum edge of the Ti-2p3/2 core level increases rapidly when the critical thickness is reached. The variations of the valence band offset and full width at half maximum of the core-level spectrum with LaCrO3 thickness suggest that the built-in fields exist both in LaCrO3 and in SrTiO3. Two possible origins are proposed:the charge transfer from LaCrO3 and the formation of a quantum well in SrTiO3. Our results shed light on the understanding of the doping mechanism at the polar/non-polar oxide interface. Moreover, due to the interesting lattice and spin structure of LCO in the (111) direction, our work provides a basis for further exploring the novel topological quantum phenomena in this system.

关键词: oxide heterostructure, LaCrO3/SrTiO3 (111), x-ray photoelectron spectroscopy, electronic structure

Abstract:

In this work, we investigate the electrical transport property and electronic structure of oxide heterostructure LaCrO3/SrTiO3 (111). The interface grown under relatively low oxygen partial pressure is found to be metallic with a conducting critical thickness of 11 unit cells of LaCrO3. This criticality is also observed by x-ray photoelectron spectroscopy, in which the Ti3+ signal intensity at the spectrum edge of the Ti-2p3/2 core level increases rapidly when the critical thickness is reached. The variations of the valence band offset and full width at half maximum of the core-level spectrum with LaCrO3 thickness suggest that the built-in fields exist both in LaCrO3 and in SrTiO3. Two possible origins are proposed:the charge transfer from LaCrO3 and the formation of a quantum well in SrTiO3. Our results shed light on the understanding of the doping mechanism at the polar/non-polar oxide interface. Moreover, due to the interesting lattice and spin structure of LCO in the (111) direction, our work provides a basis for further exploring the novel topological quantum phenomena in this system.

Key words: oxide heterostructure, LaCrO3/SrTiO3 (111), x-ray photoelectron spectroscopy, electronic structure

中图分类号:  (Electron states at surfaces and interfaces)

  • 73.20.-r
73.40.-c (Electronic transport in interface structures) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))