Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping

doi:10.1088/1674-1056/27/4/047212

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47212-047212.doi: 10.1088/1674-1056/27/4/047212

所属专题： SPECIAL TOPIC — Recent advances in thermoelectric materials and devices

Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping

Hao Wang(王浩), Jin Chen(陈进), Tianqi Lu(陆天奇), Kunjie Zhu(朱坤杰), Shan Li(李珊), Jun Liu(刘军), and Huaizhou Zhao(赵怀周)

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2018-01-22 修回日期:2018-03-05 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Jun Liu, Jun Liu
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1601213 and 51572287) and the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH013).

Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping

Hao Wang(王浩)^1,2, Jin Chen(陈进)^1,2, Tianqi Lu(陆天奇)², Kunjie Zhu(朱坤杰)¹, Shan Li(李珊)², Jun Liu(刘军)^{1, †}, and Huaizhou Zhao(赵怀周)^2,‡

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2018-01-22 Revised:2018-03-05 Online:2018-04-05 Published:2018-04-05
Contact: †Jun Liu: liujun4982004@csu.edu.cn; ‡Huaizhou Zhao:Hzhao@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1601213 and 51572287) and the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH013).

摘要/Abstract

摘要： The Zintl compound Mg₃Sb₂ has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective, nontoxicity and environment friendly characteristics. However, the intrinsically p-type Mg₃Sb₂ shows low figure of merit (zT=0.23 at 723 K) for its poor electrical conductivity. In this study, a series of Mg_3-xLi_xSb₂ bulk materials have been prepared by high-energy ball milling and spark plasma sintering (SPS) process. Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample, which can be essentially attributed to the increased carrier concentration, leading to a maximum zT of 0.59 at 723 K with the optimum doping level x=0.01. Additionally, the engineering zT and energy conversion efficiency are calculated to be 0.235 and 4.89%, respectively. To our best knowledge, those are the highest values of all reported p-type Mg₃Sb₂-based compounds with single element doping.

关键词: p-type Mg₃Sb₂ Zintl compounds, lithium doping, carrier concentration, enhanced thermoelectric properties

Abstract: The Zintl compound Mg₃Sb₂ has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective, nontoxicity and environment friendly characteristics. However, the intrinsically p-type Mg₃Sb₂ shows low figure of merit (zT=0.23 at 723 K) for its poor electrical conductivity. In this study, a series of Mg_3-xLi_xSb₂ bulk materials have been prepared by high-energy ball milling and spark plasma sintering (SPS) process. Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample, which can be essentially attributed to the increased carrier concentration, leading to a maximum zT of 0.59 at 723 K with the optimum doping level x=0.01. Additionally, the engineering zT and energy conversion efficiency are calculated to be 0.235 and 4.89%, respectively. To our best knowledge, those are the highest values of all reported p-type Mg₃Sb₂-based compounds with single element doping.

Key words: p-type Mg₃Sb₂ Zintl compounds, lithium doping, carrier concentration, enhanced thermoelectric properties

中图分类号: (Thermoelectric and thermomagnetic effects)

72.20.Pa

73.50.Lw (Thermoelectric effects)

王浩, 陈进, 陆天奇, 朱坤杰, 李珊, 刘军, 赵怀周. Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping[J]. 中国物理B, 2018, 27(4): 47212-047212.

Hao Wang(王浩), Jin Chen(陈进), Tianqi Lu(陆天奇), Kunjie Zhu(朱坤杰), Shan Li(李珊), Jun Liu(刘军), Huaizhou Zhao(赵怀周). Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping[J]. Chin. Phys. B, 2018, 27(4): 47212-047212.

参考文献 38

[1]	Bell L E 2008 Science 321 1457
[2]	Disalvo F J 1999 Science 285 703
[3]	Harman T C, Taylor P J, Walsh M P and LaForge B E 2002 Science 297 2229
[4]	Kraemer D, Poudel B, Feng H-P, Caylor J C, Yu B, Yan X, Ma Y, Wang X, Wang D, Muto A, McEnaney K, Chiesa M, Ren Z and Chen G 2011 Nat. Mater. 10 532
[5]	Pei Y, Shi X, LaLonde A, Wang H, Chen L and Snyder G J 2011 Nature 473 66
[6]	Zhao H Z, Cao B L, Li S M, Liu N, Shen J W, Li S, Jian J K, Gu L, Pei Y h, Snyder G J, Ren Z F and Chen X L 2017 Adv. Energy Mater. 7 1700446
[7]	Zhao L D, Tan G, Hao S, He J, Pei Y, Chi H, Wang H, Gong S, Xu H and Dravid V P 2016 Science 351 141
[8]	Wu Z H, Xie H Q, Wang Y Y, Xing J J and Mao J H 2015 Chin. Phys. Lett. 32 131
[9]	Xu Y 2016 Chin. Phys. B 25 54
[10]	Zhang X, Liu J, Li Y, Su W B, Li J C, Zhu Y H, Li M K, Wang C M and Wang C L 2015 Chin. Phys. Lett. 32 113
[11]	Slack G A 1995 CRC Handbook of Thermoelectrics (Boca Raton:CRC Press) p. 407
[12]	Ruan L, Luo J, Zhu H, Zhao H and Liang J 2015 J. Electron. Mater. 44 3556
[13]	Shi X, Kong H, Li C P and Uher C 2008 Appl. Phys. Lett. 92 407
[14]	Li D D, Zhao H Z, Li S M, Wei B P, Shuai J, Shi C L, Xi X K, Sun P J, Meng S, Gu L, Ren Z F and Chen X L 2015 Adv. Func. Mater. 25 6478
[15]	Kauzlarich S M,Brown S R and Jeffrey Snyder G 2007 Dalton Transactions 21 2099
[16]	Toberer E S, May A F and Snyder G J 2010 Chem. Mater. 22 624
[17]	Brown S R, Kauzlarich S M, Gascoin F and Snyder G J 2006 Chem. Mater. 18 1873
[18]	Kim S J and Kanatzidis M G 2001 Inorg. Chem. 40 3781
[19]	Gascoin F, Ottensmann S, Stark D, Haïe S M and Snyder G J 2005 Adv. Func. Mater. 15 1860
[20]	Kim J H, Okamoto N L, Kishida K, Tanaka K and Inui H 2007 J. Appl. Phys. 102 094506
[21]	Yamada T, Yamane H and Nagai H 2015 Adv. Mater. 27 4708
[22]	Tamaki H, Sato H K and Kanno T 2016 Adv. Mater. 28 10182
[23]	Jing S, Mao J, Song S, Zhu Q, Sun J, Wang Y, He R, Zhou J, Singh D J and Chen G 2017 Energy Environ. Sci. 10 799
[24]	Mao J, Shuai J, Song S, Wu Y, Dally R, Zhou J, Liu Z, Sun J, Zhang Q and Dela C C 2017 Proc. Natl. Acad. Sci. USA 114 10548
[25]	Mao J, Wu Y, Song S, Shuai J, Liu Z, Pei Y and Ren Z 2017 Mater. Today Phys. 3 1
[26]	Mao J, Wu Y, Song S, Zhu Q, Shuai J, Liu Z, Pei Y and Ren Z 2017 Acs Energy Lett. 2 2245
[27]	Zhang J, Song L, Pedersen S H, Yin H, Hung L T and Iversen B B 2017 Nat. Commun. 8 13901
[28]	Bhardwaj A and Misra D K 2014 RSC Adv. 4 34552
[29]	Bhardwaj A, Rajput A, Shukla A K, Pulikkotil J J, Srivastava A K, Dhar A, Gupta G, Auluck S, Misra D K and Budhani R C 2013 RSC Adv. 3 8504
[30]	Shuai J, Wang Y, Kim H S, Liu Z, Sun J, Chen S, Sui J and Ren Z 2015 Acta Mater. 93 187
[31]	Song L, Zhang J and Iversen B B 2017 J. Mater. Chem. A 5 4932
[32]	Kim S, Kim C, Hong Y K, Onimaru T, Suekuni K, Takabatake T and Jung M H 2014 J. Mater. Chem. 2 12311
[33]	Bhardwaj A, Chauhan N S, Goel S, Singh V, Pulikkotil J J, Senguttuvan T D and Misra D K 2016 Phys. Chem. Chem. Phys. 18 6191
[34]	Cutler M, Leavy J F and Fitzpatrick R L 1964 Phys. Rev. 133 A1143
[35]	May A F, Toberer E S, Saramat A and Snyder G J 2009 Phys. Rev. B 80 125205
[36]	Wood C 1988 Rep. Prog. Phys. 51 459
[37]	Kim H S, Gibbs Z M, Tang Y, Wang H and Snyder G J 2015 APL Mater. 3 041506
[38]	Kim H, Liu W, Chen G, Chu C and Ren Z 2015 Proc. Natl. Acad. Sci. USA 112 8205

Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping

Enhanced thermoelectric performance in p-type Mg₃Sb₂ via lithium doping

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 38

相关文章 5

Metrics

本文评价

推荐阅读 0

[1]	Yadong Wang(王亚东), Fujie Zhang(张富界), Xuri Rao(饶旭日), Haoran Feng(冯皓然),Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Advancing thermoelectrics by suppressing deep-level defects in Pb-doped AgCrSe₂ alloys[J]. 中国物理B, 2023, 32(4): 47202-047202.
[2]	Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅). Quantitative measurement of the charge carrier concentration using dielectric force microscopy[J]. 中国物理B, 2023, 32(3): 37202-037202.
[3]	李世彬, 余宏萍, 张婷, 陈志, 吴志明. Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction[J]. , 2014, 23(10): 107101-107101.
[4]	张益军, 常本康, 杨智, 牛军, 邹继军. Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy[J]. 中国物理B, 2009, 18(10): 4541-4546.
[5]	雷青松, 吴志猛, 耿新华, 赵颖, 孙健, 奚建平. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films[J]. 中国物理B, 2006, 15(1): 213-218.