中国物理B ›› 2018, Vol. 27 ›› Issue (12): 127202-127202.doi: 10.1088/1674-1056/27/12/127202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Temporal pulsed x-ray response of CdZnTe:In detector

Rong-Rong Guo(郭榕榕), Ya-Dong Xu(徐亚东), Gang-Qiang Zha(查钢强), Tao Wang(王涛), Wan-Qi Jie(介万奇)   

  1. 1 School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;
    2 State Key Laboratory of Solidification Processing, Northwestern Polytechnical University(NWPU), Xi'an 710072, China
  • 收稿日期:2018-08-17 修回日期:2018-09-26 出版日期:2018-12-05 发布日期:2018-12-05
  • 通讯作者: Ya-Dong Xu E-mail:xyd220@nwpu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51702271 and U1631116), the Young and Middle-aged Teachers Education and Scientific Research Foundation of Fujian Province, China (Grant No. JAT170407), the High Level Talent Project of Xiamen University of Technology, China (Grant No.YKJ16016R), and the Fund of the State Key Laboratory of Solidification Processing in NWPU, China (Grant No. SKLSP201741).

Temporal pulsed x-ray response of CdZnTe:In detector

Rong-Rong Guo(郭榕榕)1,2, Ya-Dong Xu(徐亚东)2, Gang-Qiang Zha(查钢强)2, Tao Wang(王涛)2, Wan-Qi Jie(介万奇)2   

  1. 1 School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;
    2 State Key Laboratory of Solidification Processing, Northwestern Polytechnical University(NWPU), Xi'an 710072, China
  • Received:2018-08-17 Revised:2018-09-26 Online:2018-12-05 Published:2018-12-05
  • Contact: Ya-Dong Xu E-mail:xyd220@nwpu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51702271 and U1631116), the Young and Middle-aged Teachers Education and Scientific Research Foundation of Fujian Province, China (Grant No. JAT170407), the High Level Talent Project of Xiamen University of Technology, China (Grant No.YKJ16016R), and the Fund of the State Key Laboratory of Solidification Processing in NWPU, China (Grant No. SKLSP201741).

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摘要：

The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×109 photons mm-2·s-1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

关键词: CdZnTe, ultrafast-pulsed x-rays, transient current, charge carrier

Abstract:

The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×109 photons mm-2·s-1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

Key words: CdZnTe, ultrafast-pulsed x-rays, transient current, charge carrier

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Ga (II-VI semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)