Performance enhancement of CMOS terahertz detector by drain current

doi:10.1088/1674-1056/26/9/098401

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98401-098401.doi: 10.1088/1674-1056/26/9/098401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Performance enhancement of CMOS terahertz detector by drain current

Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋)

College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

收稿日期:2017-04-17 修回日期:2017-06-07 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Xiaoli Ji E-mail:xji@nju.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB-0402403), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20141321), CAST Project, China (Grant No. 08201601), and the National Science Foundation for Young Scholars of China (Grant No. 61404072).

Performance enhancement of CMOS terahertz detector by drain current

Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋)

College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received:2017-04-17 Revised:2017-06-07 Online:2017-09-05 Published:2017-09-05
Contact: Xiaoli Ji E-mail:xji@nju.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB-0402403), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20141321), CAST Project, China (Grant No. 08201601), and the National Science Foundation for Young Scholars of China (Grant No. 61404072).

摘要/Abstract

摘要：

In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor field-effect transistors (MOSFETs) both theoretically and experimentally. The analytical model, which is based on the small-signal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity R_v with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the R_v improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power (NEP) with the applied current. We determine the tradeoff between the low-NEP and high-R_v for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in R_v without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.

关键词: drain current, CMOS terahertz detectors, voltage responsivity, noise equivalent power

Abstract:

Key words: drain current, CMOS terahertz detectors, voltage responsivity, noise equivalent power

中图分类号: (Microwave integrated electronics)

84.40.Lj

85.30.Tv (Field effect devices) 87.57.cm (Noise)

张行行, 纪小丽, 廖轶明, 彭静宇, 朱晨昕, 闫锋. Performance enhancement of CMOS terahertz detector by drain current[J]. 中国物理B, 2017, 26(9): 98401-098401.

Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋). Performance enhancement of CMOS terahertz detector by drain current[J]. Chin. Phys. B, 2017, 26(9): 98401-098401.

参考文献 20

[1]	Sherry H, Hadi R A, Grzyb J, Öjefors E, Cathelin A, Kaiser A and Pfeiffer U R 2011 Radio Frequency Integrated Circuits Symposium (RFIC) 1-4
[2]	Sengupta K, Seo D, Yang L and Hajimiri A 2015 IEEE Trans. Terahertz Sci. Tech. 5 427
[3]	Schuster F, Coquillat D, Videlier H, Sakowicz M, Teppe F, Dussopt L, Giffard B, Skotnicki T and Knap W 2011 Optics Express 19 7827
[4]	Hadi R A, Sherry H, Grzyb J, Zhao Y, Forster W, Keller H, Cathelin A, Kaiser A and Pfeiffer U R 2012 IEEE Journal of Solid-State Circuits 47 2999
[5]	Schuster F, Videlier H, Dupret A, Coquillat D, Sakowicz M, Rostaing J, Tchagaspanian M, Giffard B and Knap W 2011 IEEE International Solid-State Circuits Conference 42
[6]	Lisauskas A, Pfeiffer U, Öjefors E, Bolivar P H, Glaab D and Roskos H G 2009 J. Appl. Phys. 105 114511
[7]	Ryu M W, Lee J S, Park K, Kim K R, Park W K and Han S T 2013 Simulation of Semiconductor Processes and Devices (SISPAD) 200
[8]	Dyakonov M and Shur M 1993 Phys. Rev. Lett. 71 2465
[9]	Tombet S B, Tanimoto Y, Satou A, Suemitsu T, Wang Y, Minamide H, Ito H, Fateev D V, Popov V and Otsuji T 2014 Appl. Phys. Lett. 104 262104
[10]	Lisauskas A, Boppel S, Matukas J, Palenskis V, Minkevičius L, Valušis G, Bolívar P H and Roskos H G 2013 Appl. Phys. Lett. 102 153505
[11]	Veksler D, Teppe F, Dmitriev A P, Kachorovskii V Y, Knap W and Shur M S 2006 Phys. Rev. B 73 125328
[12]	Lu J Q and Shur M S 2001 Appl. Phys. Lett. 78 2587
[13]	Fatimy A E, Teppe F, Dyakonova N, Knap W, Seliuta D, Valusis G, Shchepetov A, Roelens Y, Bollaert S, Cappy A and Rumyantsev S 2006 Appl. Phys. Lett. 89 131926
[14]	Knap W, Deng Y, Rumyantsev S, Lu J Q, Shur M S, Saylor C A and Brunel L C 2002 Appl. Phys. Lett. 80 3433
[15]	Knap W, Kachorowskii V, Deng Y, Rumyantsev S, Lu J Q, Gaska R, Shur M S, Simin G, Hu X and Khan M A 2002 J. Appl. Phys. 91 9346
[16]	Meziani Y M, Lusakowski J, Dyakonova N, Knap W, Seliuta D, Sirmulis E, Deverson J, Valusis G, Boeuf F and Skotnicki T 2006 IEICE Trans. Electr. E89-C 993
[17]	Dyer G C, Crossno J D, Aizin G R, Mikalopas J, Shaner E A, Wanke M C, Reno J L and Allen S J 2009 Proc. SPIE 721503
[18]	Elkhatib T A, Kachorovskii V Y, Stillman W J, Rumyantsev S, Zhang X C and Shur M S 2011 Appl. Phys. Lett. 98 243505
[19]	Haartman M V and Östling M 2007 Low-frequency Noise in Advanced MOS Devices (Springer Science & Business Media) pp. 11-12
[20]	Behzad R 2003 Design of Analog CMOS Integrated Circuits (Xi'an: Xi'an Jiaotong University Press) pp. 116-121

Performance enhancement of CMOS terahertz detector by drain current

Performance enhancement of CMOS terahertz detector by drain current

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