Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

doi:10.1088/1674-1056/26/9/097301

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/26/9/097301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣)

Department of Physics and Electronic Sciences, Hunan University of Arts and Science, Changde 415000, China

收稿日期:2017-04-02 修回日期:2017-06-12 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Chang-Sheng Li E-mail:lcs135@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11104069).

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣)

Department of Physics and Electronic Sciences, Hunan University of Arts and Science, Changde 415000, China

Received:2017-04-02 Revised:2017-06-12 Online:2017-09-05 Published:2017-09-05
Contact: Chang-Sheng Li E-mail:lcs135@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11104069).

摘要/Abstract

摘要： We adopt a self-consistent real space Kerker method to prevent the divergence from charge sloshing in the simulating transistors with realistic discrete dopants in the source and drain regions. The method achieves efficient convergence by avoiding unrealistic long range charge sloshing but keeping effects from short range charge sloshing. Numerical results show that discrete dopants in the source and drain regions could have a bigger influence on the electrical variability than the usual continuous doping without considering charge sloshing. Few discrete dopants and the narrow geometry create a situation with short range Coulomb screening and oscillations of charge density in real space. The dopants induced quasi-localized defect modes in the source region experience short range oscillations in order to reach the drain end of the device. The charging of the defect modes and the oscillations of the charge density are identified by the simulation of the electron density.

关键词: electron transport, nanowire transistor, non-equilibrium Green', s function, dopant

Abstract: We adopt a self-consistent real space Kerker method to prevent the divergence from charge sloshing in the simulating transistors with realistic discrete dopants in the source and drain regions. The method achieves efficient convergence by avoiding unrealistic long range charge sloshing but keeping effects from short range charge sloshing. Numerical results show that discrete dopants in the source and drain regions could have a bigger influence on the electrical variability than the usual continuous doping without considering charge sloshing. Few discrete dopants and the narrow geometry create a situation with short range Coulomb screening and oscillations of charge density in real space. The dopants induced quasi-localized defect modes in the source region experience short range oscillations in order to reach the drain end of the device. The charging of the defect modes and the oscillations of the charge density are identified by the simulation of the electron density.

Key words: electron transport, nanowire transistor, non-equilibrium Green's function, dopant

中图分类号: (Electronic transport in mesoscopic systems)

73.23.-b

73.63.-b (Electronic transport in nanoscale materials and structures) 72.10.Fk (Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))

李长生, 马磊, 郭杰荣. Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants[J]. 中国物理B, 2017, 26(9): 97301-097301.

Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣). Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants[J]. Chin. Phys. B, 2017, 26(9): 97301-097301.

参考文献 34

[1]	Martinez A, Bescond M, Barker J R, Svizhenkov A, Anantram A, Millar C and Asenov A 2007 IEEE Trans. Electron Dev. 54 2213
[2]	Markov S, Cheng B and Asenov A 2012 IEEE Electron Dev. Lett. 33 315
[3]	Zhang L N, He J, Zhou W, Chen L and Xu Y W 2010 Chin. Phys. B 19 47306
[4]	Liu Y, He J, Chan M, Du C X, Ye Y, Zhao W, Wu W, Deng W L and Wang W P 2014 Chin. Phys. B 23 097102
[5]	Mayank C, Kinshuk G and Babu V G 2015 J. Nanosci. Nanoeng. Appl. 5 20
[6]	Chen L, Cai F, Otuonye U and Lu W D 2016 Nano Lett. 16 420
[7]	Seo J H, Yoon Y J, Lee S, Lee J H, Cho S and Kang I M 2015 Current Applied Physics 15 208
[8]	Seoane N, Martinez A, Brown A R, Barker J R and Asenov A 2009 IEEE Trans. Electron Dev. 56 1388
[9]	Martinez A, Seoane N, Brown A R, Barker J R and Asenov A 2009 IEEE Trans. Nanotechnol. 8 603
[10]	Yoon J S, Rim T, Kim J, Kim K and Baek C K 2015 Appl. Phys. Lett. 106 103507
[11]	Bagwell P F 1990 Phys. Rev. B 41 10354
[12]	Kim C S, Satanin A M, Joe Y S and Cosby R M 1999 Phys. Rev. B 60 10962
[13]	Bardarson J H, Magnusdottir I, Gudmundsdottir G, Tang C S, Manolescu A and Gudmundsson V 2004 Phys. Rev. B 70 245308
[14]	Mondal P, Ghosh B, Bal P, Akram M W and Salimath A 2015 Appl. Phys. A 119 127
[15]	Nayak K, Agarwal S and Bajaj M 2015 IEEE Trans. Electron Dev. 62 685
[16]	Sylvia S S, Habib K M M, Khayer M A, Alam K, Neupane M and Lake R K 2014 IEEE Trans. Electron Dev. 61 2208
[17]	Georgiev V P, Towie E and Asenov A 2013 IEEE Trans. Electron Dev. 60 965
[18]	Arias T A, Payne M C and Joannopoulos J D 1992 Phys. Rev. Lett. 69 1077
[19]	Kresse G and Hafner J 1993 Phys. Rev. B 48 13115
[20]	Kerker G P 1981 Phys. Rev. B 23 3082
[21]	Tassone F, Mauri F and Car R 1994 Phys. Rev. B 50 10561
[22]	David R, Canning A and Wang L 2001 Phys. Rev. B 64 121101
[23]	Marks L D and Luke D R 2008 Phys. Rev. B 78 075114
[24]	Manninen M T, Nieminen R M, Hautojarvi P and Arponen J S 1975 Phys. Rev. B 12 4012
[25]	Shiihara Y, Kuwazuru O and Yoshikawa N 2008 Modelling and Simulation in Materials Science and Engineering 16 3
[26]	Tan I H, Snider G L, Chang L D and Hu E L 1990 J. Appl. Phys. 68 4071
[27]	Wang J, Rahman A, Ghosh A, Klimech G and Lundstrom M 2005 IEEE Trans. Electron Dev. 52 1589
[28]	Bescond M, Autran J L, Munteanu D and Lannoo M 2004 Solid-State Electron 48 567
[29]	Jin S, Tang T W and Fischetti M V 2008 IEEE Trans. Electron Dev. 55 727
[30]	Bescond M, lannoo M, Raymond L and Michelini F 2010 J. Appl. Phys. 107 093703
[31]	Nehari K, Cavassilas N, Michelini F, Bescond M, Autran J L and Lannoo M 2007 Appl. Phys. Lett. 90 132112
[32]	Carrillo N H, Bescond M, Cavassilas N, Dib E and Lannoo M 2014 J. Appl. Phys. 116 164505
[33]	Datta S 1997 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press) p. 300
[34]	Jauho A P, Wingreen N S and Meir Y 1994 Phys. Rev. B 50 5528

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 34

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	He-Yu Lin(林赫羽), Rong-Qiang He(贺荣强), and Zhong-Yi Lu(卢仲毅). Green's function Monte Carlo method combined with restricted Boltzmann machine approach to the frustrated J₁-J₂ Heisenberg model[J]. 中国物理B, 2022, 31(8): 80203-080203.
[2]	Ming-Lang Wang(王明郎), Bo-Han Zhang(张博涵), Wen-Fei Zhang(张雯斐), Xin-Yue Tian(田馨月), Guang-Ping Zhang(张广平), and Chuan-Kui Wang(王传奎). Effect of crystallographic orientations on transport properties of methylthiol-terminated permethyloligosilane molecular junction[J]. 中国物理B, 2022, 31(7): 77303-077303.
[3]	Yi Guo(郭逸), Peng Zhao(赵朋), and Gang Chen(陈刚). Theoretical design of thermal spin molecular logic gates by using a combinational molecular junction[J]. 中国物理B, 2022, 31(4): 47202-047202.
[4]	Gui-Rong Liu(刘桂榕), Xiao-Dong Chen(陈晓东), Hong-Gang Liu(刘红刚), Yan Wang(王琰), Min Sun(孙敏), Na Yan(闫娜), Qi Qian(钱奇), and Zhong-Min Yang(杨中民). Radiation resistance property of barium gallo-germanate glass doped by Nb₂O₅[J]. 中国物理B, 2022, 31(2): 27801-027801.
[5]	Yan Liu(刘妍), Ping Wang(王平), Ting Yang(杨婷), Qian Wu(吴茜), Yintang Yang(杨银堂), and Zhiyong Zhang(张志勇). Steady-state and transient electronic transport properties of β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation[J]. 中国物理B, 2022, 31(11): 117305-117305.
[6]	Yuan Ge(葛源), Jie Li(李杰), Wenwu Jiang(蒋文武), Lidan Wang(王丽丹), and Shukai Duan(段书凯). A spintronic memristive circuit on the optimized RBF-MLP neural network[J]. 中国物理B, 2022, 31(11): 110702-110702.
[7]	Can Li(李灿), Hongyu Xu(徐宏宇), Chongyang Zhi(郅冲阳), Zhi Wan(万志), and Zhen Li(李祯). TiO₂/SnO₂ electron transport double layers with ultrathin SnO₂ for efficient planar perovskite solar cells[J]. 中国物理B, 2022, 31(11): 118802-118802.
[8]	Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor[J]. 中国物理B, 2022, 31(1): 17701-017701.
[9]	Tao Wang(汪涛), Gui-Jiang Xiao(肖贵将), Ren Sun(孙韧), Lin-Bao Luo(罗林保), and Mao-Xiang Yi(易茂祥). High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH₃NH₃PbI₃[J]. 中国物理B, 2022, 31(1): 18801-018801.
[10]	Minghui Qu(曲明慧), Jiayi He(贺家怡), Kexin Liu(刘可心), Liemao Cao(曹烈茂), Yipeng Zhao(赵宜鹏), Jing Zeng(曾晶), and Guanghui Zhou(周光辉). Device design based on the covalent homocouplingof porphine molecules[J]. 中国物理B, 2021, 30(9): 98504-098504.
[11]	Ning Wang(王宁), Xingtao An(安兴涛), and Shuhui Lv(吕树慧). Detection of spin current through a quantum dot with Majorana bound states[J]. 中国物理B, 2021, 30(10): 100302-100302.
[12]	Hamed Rezania, Farshad Azizi. Charge structure factors of doped armchair nanotubes in the presence of electron-phonon interaction[J]. 中国物理B, 2020, 29(9): 96501-096501.
[13]	曾晶, 陈克求, 周艳红. Exploring how hydrogen at gold-sulfur interface affects spin transport in single-molecule junction[J]. 中国物理B, 2020, 29(8): 88503-088503.
[14]	王子群, 唐菲, 董密密, 王明郎, 胡贵超, 冷建材, 王传奎, 张广平. Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes[J]. 中国物理B, 2020, 29(6): 67202-067202.
[15]	许华慨, 欧阳钢. Defect engineering on the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons[J]. 中国物理B, 2020, 29(3): 37302-037302.