中国物理B ›› 2017, Vol. 26 ›› Issue (8): 84202-084202.doi: 10.1088/1674-1056/26/8/084202

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

Yong-Zhou Xue(薛永洲), Ze-Sheng Chen(陈泽升), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川), De-Sheng Jiang(江德生), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-02-06 修回日期:2017-04-06 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Xiu-Ming Dou, Bao-Quan Sun E-mail:xmdou04@semi.ac.cn;bqsun@semi.ac.cn
  • 基金资助:

    Project supported by the National Basic Research Program, China (Grant No. 2013CB922304), the National Key Research and Development Program of China (Grant No. 2016YFA0301202), and the National Natural Science Foundation of China (Grant Nos. 11474275, 61674135, and 91536101).

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

Yong-Zhou Xue(薛永洲)1,2, Ze-Sheng Chen(陈泽升)1, Hai-Qiao Ni(倪海桥)1, Zhi-Chuan Niu(牛智川)1, De-Sheng Jiang(江德生)1, Xiu-Ming Dou(窦秀明)1,2, Bao-Quan Sun(孙宝权)1,2   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-02-06 Revised:2017-04-06 Online:2017-08-05 Published:2017-08-05
  • Contact: Xiu-Ming Dou, Bao-Quan Sun E-mail:xmdou04@semi.ac.cn;bqsun@semi.ac.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Basic Research Program, China (Grant No. 2013CB922304), the National Key Research and Development Program of China (Grant No. 2016YFA0301202), and the National Natural Science Foundation of China (Grant Nos. 11474275, 61674135, and 91536101).

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摘要：

We report on the resonance fluorescence (RF) from single InAs quantum dots (QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond (ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.

关键词: quantum dots, resonance fluorescence, single photons, Rabi oscillation

Abstract:

We report on the resonance fluorescence (RF) from single InAs quantum dots (QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond (ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.

Key words: quantum dots, resonance fluorescence, single photons, Rabi oscillation

中图分类号:  (Quantum description of interaction of light and matter; related experiments)

  • 42.50.Ct
42.50.Pq (Cavity quantum electrodynamics; micromasers) 78.55.Cr (III-V semiconductors) 78.67.Hc (Quantum dots)