Diode-pumped laser performance of Tm:Sc2SiO5 crystal at 1971 nm

doi:10.1088/1674-1056/26/8/084203

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 84203-084203.doi: 10.1088/1674-1056/26/8/084203

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Diode-pumped laser performance of Tm:Sc₂SiO₅ crystal at 1971 nm

Bin Liu(刘斌), Li-He Zheng(郑丽和), Qing-Guo Wang(王庆国), Jun-Fang Liu(刘军芳), Liang-Bi Su(苏良碧), Hui-Li Tang(唐慧丽), Jie Liu(刘杰), Xiu-Wei Fan(范秀伟), Feng Wu(吴锋), Ping Luo(罗平), Heng-Yu Zhao(赵衡煜), Jiao-Jiao Shi(施佼佼), Nuo-Tian He(何诺天), Na Li(李纳), Qiu Li(李秋), Chao Guo(郭超), Xiao-Dong Xu(徐晓东), Zhan-Shan Wang(王占山), Jun Xu(徐军)

1 School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
2 Key Laboratory of Transparent and Opto-Functional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
3 Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China;
4 School of Materials Science and Engineering, Tongji University, Shanghai 200092, China;
5 College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
6 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China

收稿日期:2016-09-07 修回日期:2017-04-17 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Qing-Guo Wang, Jun Xu E-mail:wqingguo2013@163.com;xujun@mail.shcnc.ac.cn
基金资助:
Project supported by the Shanghai Municipal Engineering Research Center for Sapphire Crystals, China (Grant No. 14DZ2252500), the Fund of Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences (Grant No. 2008DP17301), the Fundamental Research Funds for the Central Universities, the National Natural Science Foundation of China and the China Academy of Engineering Physics Joint Fund (Grant No. U1530152), the National Natural Science Foundation of China (Grant Nos. 61475177 and 61621001), the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1446100), and the MDE Key Laboratory of Advanced Micro-Structured Materials.

Diode-pumped laser performance of Tm:Sc₂SiO₅ crystal at 1971 nm

Bin Liu(刘斌)¹, Li-He Zheng(郑丽和)², Qing-Guo Wang(王庆国)^1,3, Jun-Fang Liu(刘军芳)⁴, Liang-Bi Su(苏良碧)², Hui-Li Tang(唐慧丽)^1,3, Jie Liu(刘杰)⁵, Xiu-Wei Fan(范秀伟)⁵, Feng Wu(吴锋)^1,3, Ping Luo(罗平)^1,3, Heng-Yu Zhao(赵衡煜)¹, Jiao-Jiao Shi(施佼佼)¹, Nuo-Tian He(何诺天)¹, Na Li(李纳)¹, Qiu Li(李秋)¹, Chao Guo(郭超)¹, Xiao-Dong Xu(徐晓东)⁶, Zhan-Shan Wang(王占山)¹, Jun Xu(徐军)^1,3

1 School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
2 Key Laboratory of Transparent and Opto-Functional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
3 Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China;
4 School of Materials Science and Engineering, Tongji University, Shanghai 200092, China;
5 College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
6 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China

Received:2016-09-07 Revised:2017-04-17 Online:2017-08-05 Published:2017-08-05
Contact: Qing-Guo Wang, Jun Xu E-mail:wqingguo2013@163.com;xujun@mail.shcnc.ac.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the Shanghai Municipal Engineering Research Center for Sapphire Crystals, China (Grant No. 14DZ2252500), the Fund of Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences (Grant No. 2008DP17301), the Fundamental Research Funds for the Central Universities, the National Natural Science Foundation of China and the China Academy of Engineering Physics Joint Fund (Grant No. U1530152), the National Natural Science Foundation of China (Grant Nos. 61475177 and 61621001), the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1446100), and the MDE Key Laboratory of Advanced Micro-Structured Materials.

摘要/Abstract

摘要：

The 4-at.% Tm:Sc₂SiO₅(Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.

关键词: diode-pumped lasers, laser materials, crystal growth

Abstract:

Key words: diode-pumped lasers, laser materials, crystal growth

中图分类号: (Diode-pumped lasers)

42.55.Xi

42.70.Hj (Laser materials) 81.10.Fq (Growth from melts; zone melting and refining)

刘斌, 郑丽和, 王庆国, 刘军芳, 苏良碧, 唐慧丽, 刘杰, 范秀伟, 吴锋, 罗平, 赵衡煜, 施佼佼, 何诺天, 李纳, 李秋, 郭超, 徐晓东, 王占山, 徐军. Diode-pumped laser performance of Tm:Sc₂SiO₅ crystal at 1971 nm[J]. 中国物理B, 2017, 26(8): 84203-084203.

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Diode-pumped laser performance of Tm:Sc₂SiO₅ crystal at 1971 nm

Diode-pumped laser performance of Tm:Sc₂SiO₅ crystal at 1971 nm

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