| [1] |
Chen H Y, Liu K W, Hu L F, Al-Ghamdi A A and Fang X S 2015 Mater. Today 18 493
|
| [2] |
Peng L, Hu L F and Fang X S 2013 Adv. Mater. 25 5321
|
| [3] |
Guo F W, Yang B, Yuan Y B, Xiao Z G, Dong Q F, Bi Y and Huang J S 2012 Nat. Nanotechnol. 7 798
|
| [4] |
Sang L W, Liao M Y and Sumiya M 2013 Sensors 13 10482
|
| [5] |
Alaie Z, Nejad S M and Yousefi M H 2015 Mater. Sci. Semicond. Process 29 16
|
| [6] |
You K, Jiang H, Li D B, Sun X J, Song H, Chen Y R, Li Z M, Miao G Q and Liu H B 2012 Appl. Phys. Lett. 100 4
|
| [7] |
Xie F, Lu H, Chen D J, Ji X L, Yan F, Zhang R, Zheng Y D, Li L and Zhou J J 2012 IEEE Sens. J. 12 5
|
| [8] |
Zhu D, Wallis D J and Humphreys C J 2013 Rep. Prog. Phys. 76 31
|
| [9] |
Scholz F 2012 Semicond. Sci. Technol. 27 15
|
| [10] |
Hardy M T, Feezell D F, DenBaars S P and Nakamura S 2011 Mater. Today 14 408
|
| [11] |
Cicek E, McClintock R, Cho C Y, Rahnema B and Razeghi M 2013 Appl. Phys. Lett. 103 4
|
| [12] |
Sedhain A, Lin J Y and Jiang H X 2012 Appl. Phys. Lett. 100 4
|
| [13] |
Gordon L, Lyons J L, Janotti A and Van de Walle C G 2014 Phys. Rev. B 89 6
|
| [14] |
Lorenz K, Peres M, Franco N, Marques J G, Miranda S M C, Magalhaes S, Monteiro T, Wesch W, Alves E and Wendler E 2011 Conference on Oxide-based Materials and Devices II, January 23-26, 2011, San Francisco, CA, USA
|
| [15] |
Brillson L J and Lu Y C 2011 J. Appl. Phys. 109 33
|
| [16] |
Liu K W, Sakurai M and Aono M 2010 Sensors 10 8604
|
| [17] |
Hou Y N, Mei Z X and Du X L 2014 J. Phys. D: Appl. Phys. 47 25
|
| [18] |
Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T, Vispute R D and Shen H 2003 Appl. Phys. Lett. 82 3424
|
| [19] |
Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T and Koinuma H 2001 Appl. Phys. Lett. 78 1237
|
| [20] |
Tsukazaki A, Ohtomo A, Kita T, Ohno Y, Ohno H and Kawasaki M 2007 Science 315 1388
|
| [21] |
Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z and Zou J 2014 Nanoscale 6 4936
|
| [22] |
Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H, Sakurai Y, Yoshida Y, Yasuda T and Segawa Y 1998 Appl. Phys. Lett. 72 2466
|
| [23] |
Ohtomo A, Tamura K, Kawasaki M, Makino T, Segawa Y, Tang Z K, Wong G K L, Matsumoto Y and Koinuma H 2000 Appl. Phys. Lett. 77 2204
|
| [24] |
Gruber T, Kirchner C, Kling R, Reuss F and Waag A 2004 Appl. Phys. Lett. 84 5359
|
| [25] |
Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A and Kawasaki M 2010 Appl. Phys. Lett. 97 3
|
| [26] |
Yang W, Vispute R D, Choopun S, Sharma R P, Venkatesan T and Shen H 2001 Appl. Phys. Lett. 78 2787
|
| [27] |
Zhu H, Shan C X, Wang L K, Zheng J, Zhang J Y, Yao B and Shen D Z 2010 J. Phys. Chem. C 114 7169
|
| [28] |
Liu K W, Shen D Z, Shan C X, Zhang J Y, Yao B, Zhao D X, Lu Y M and Fan X W 2007 Appl. Phys. Lett. 91 3
|
| [29] |
Tabares G, Hierro A, Ulloa J M, Guzman A, Munoz E, Nakamura A, Hayashi T and Temmyo J 2010 Appl. Phys. Lett. 96 3
|
| [30] |
Tang K, Huang J, Zeng Q K, Zhang J J, Shi W M, Xia Y B and Wang L J 2011 7th International Conference on Thin Film Physics and Applications, September 24-27, 2010, Shanghai, China
|
| [31] |
Li G M, Zhang J W, Liu Y and Zhang K F 2011 Opt. Eng. 50 4
|
| [32] |
Liu R S, Jiang D Y, Duan Q, Sun L, Tian C G, Liang Q C, Gao S and Qin J M 2014 Appl. Phys. Lett. 105 4
|
| [33] |
Li J Y, Chang S P, Lin H H and Chang S J 2015 IEEE Photon. Technol. Lett. 27 978
|
| [34] |
Hwang J D and Lin G S 2016 Nanotechnology 27 6
|
| [35] |
Hou Y N, Mei Z X, Liang H L, Ye D Q, Liang S, Gu C Z and Du X L 2011 Appl. Phys. Lett. 98 3
|
| [36] |
Schoenfeld W V, Wei M, Boutwell R C and Liu H Y 2014 Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West, February 2-5, 2014, San Francisco, CA, USA
|
| [37] |
Zhao Y M, Zhang J Y, Jiang D Y, Shan C X, Zhang Z Z, Yao B, Zhao D X and Shen D Z 2009 ACS Appl. Mater. Interfaces 1 2428
|
| [38] |
Liu K W, Shen D Z, Shan C X, Zhang J Y, Jiang D Y, Zhao Y M, Yao B and Zhao D X 2008 J. Phys. D: Appl. Phys. 41 3
|
| [39] |
Jiang D Y, Zhang J Y, Liu K W, Zhao Y M, Cong C X, Lu Y M, Yao B, Zhang Z Z and Shen D Z 2007 Semicond. Sci. Technol. 22 687
|
| [40] |
Hou Y N, Mei Z X, Liang H L, Ye D Q, Gu C Z, Du X L and Lu Y C 2013 IEEE Trans. Electron Dev. 60 3474
|
| [41] |
Tian C H, Jiang D Y, Tan Z D, Duan Q, Liu R S, Sun L, Qin J M, Hou J H, Gao S, Liang Q C and Zhao J X 2014 Mater. Res. Bull. 60 46
|
| [42] |
Chen H Y, Liu K W, Chen X, Zhang Z Z, Fan M M, Jiang M M, Xie X H, Zhao H F and Shen D Z 2014 J. Mater. Chem. C 2 9689
|
| [43] |
Zhao Y J, Jiang D Y, Liu R S, Duan Q, Tian C G, Sun L, Gao S, Qin J M, Liang Q C and Zhao J X 2015 Solid-State Electron. 111 223
|
| [44] |
Tian C G, Jiang D Y, Pei J A, Sun L, Liu R S, Guo Z X, Hou J H, Zhao J X, Liang Q C, Gao S and Qin J M 2016 J. Alloys Compd. 667 65
|
| [45] |
Sun L, Jiang D Y, Zhang G Y, Liu R S, Duan Q, Qin J M, Liang Q C, Gao S, Hou J H, Zhao J X, Liu W Q and Shen X D 2016 J. Appl. Phys. 119 5
|
| [46] |
Hu Z F, Li Z J, Zhu L, Liu F J, Lv Y W, Zhang X Q and Wang Y S 2012 Opt. Lett. 37 3072
|
| [47] |
Shan C X, Liu J S, Lu Y J, Li B H, Ling F C C and Shen D Z 2015 Opt. Lett. 40 3041
|
| [48] |
Zhang L N, Lin H T, Wu Y S and Zhuo S P 2016 Chem. Phys. Lett. 661 224
|
| [49] |
Vempati S, Chirakkara S, Mitra J, Dawson P, Nanda K K and Krupanidhi S B 2012 Appl. Phys. Lett. 100 4
|
| [50] |
Fan J C, Sreekanth K M, Xie Z, Chang S L and Rao K V 2013 Prog. Mater. Sci. 58 874
|
| [51] |
Zhang B, Li M, Wang J Z and Shi L Q 2013 Chin. Phys. Lett. 30 027303
|
| [52] |
Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H, Zhang Z Z, Zhao D X, Shan C X, Yao B and Shen D Z 2012 Phys. Rev. Lett. 108 5
|
| [53] |
Liu Z L, Mei Z X, Zhang T C, Liu Y P, Guo Y, Du X L, Hallen A, Zhu J J and Kuznetsov A Y 2009 J. Cryst. Growth 311 4356
|
| [54] |
Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B and Lin Z 2011 Appl. Phys. Lett. 98 3
|
| [55] |
Liang H L, Mei Z X, Zhang Q H, Gu L, Liang S, Hou Y N, Ye D Q, Gu C Z, Yu R C and Du X L 2011 Appl. Phys. Lett. 98 3
|
| [56] |
Hou Y N, Mei Z X, Liang H L, Ye D Q, Gu C Z and Du X L 2013 Appl. Phys. Lett. 102 4
|
| [57] |
Liang H L, Mei Z X, Hou Y N, Liang S, Liu Z L, Liu Y P, Li J Q and Du X L 2013 J. Cryst. Growth 381 6
|
| [58] |
Jiang D Y, Tian C G, Yang G, Qin J M, Liang Q C, Zhao J X, Hou J H and Gao S 2015 Mater. Res. Bull. 67 158
|
| [59] |
Zheng Q H, Huang F, Huang J, Hu Q C, Chen D G and Ding K 2012 IEEE Electron Dev. Lett. 33 1033
|
| [60] |
Hwang J D, Lin J S and Hwang S B 2015 J. Phys. D: Appl. Phys. 48 6
|
| [61] |
Wang L K, Ju Z G, Zhang J Y, Zheng J, Shen D Z, Yao B, Zhao D X, Zhang Z Z, Li B H and Shan C X 2009 Appl. Phys. Lett. 95 3
|
| [62] |
Han S, Zhang J Y, Zhang Z Z, Zhao Y M, Wang L K, Zheng J A, Yao B, Zhao D X and Shen D Z 2010 ACS Appl. Mater. Interfaces 2 1918
|
| [63] |
Jiang D Y, Shan C X, Zhang J Y, Lu Y M, Yao B, Zhao D X, Zhang Z Z, Shen D Z and Yang C L 2009 J. Phys. D: Appl. Phys. 42 3
|
| [64] |
Fan M M, Liu K W, Chen X, Zhang Z Z, Li B H, Zhao H F and Shen D Z 2015 J. Mater. Chem. C 3 313
|
| [65] |
Han S, Zhang Z Z, Zhang J Y, Wang L K, Zheng J, Zhao H F, Zhang Y C, Jiang M M, Wang S P, Zhao D X, Shan C X, Li B H and Shen D Z 2011 Appl. Phys. Lett. 99 4
|
| [66] |
Boutwell R C, Wei M and Schoenfeld W V 2013 Appl. Surf. Sci. 284 254
|
| [67] |
Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z and Fan X W 2008 Appl. Phys. Lett. 9 3
|
| [68] |
Xie X H, Zhang Z Z, Li B H, Wang S P, Jiang M M, Shan C X, Zhao D X, Chen H Y and Shen D Z 2014 Opt. Express 22 246
|
| [69] |
Xie X H, Zhang Z Z, Li B H, Wang S P and Shen D Z 2015 Opt. Express 23 32329
|
| [70] |
Boutwell R C, Wei M and Schoenfeld W V 2013 Appl. Phys. Lett. 103 4
|
| [71] |
Liu C Y, Xu H Y, Wang L, Li X H and Liu Y C 2009 J. Appl. Phys. 106 4
|
| [72] |
Xie X H, Zhang Z Z, Shan C X, Chen H Y and Shen D Z 2012 Appl. Phys. Lett. 101 3
|
| [73] |
Fan M M, Liu K W, Zhang Z Z, Li B H, Chen X, Zhao D X, Shan C X and Shen D Z 2014 Appl. Phys. Lett. 10 5
|
| [74] |
Fan M M, Liu K W, Chen X, Wang X, Zhang Z Z, Li B H and Shen D Z 2015 ACS Appl. Mater. Interfaces 7 20600
|