中国物理B ›› 2017, Vol. 26 ›› Issue (2): 27701-027701.doi: 10.1088/1674-1056/26/2/027701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

Xue-Li Ma(马雪丽), Hong Yang(杨红), Jin-Juan Xiang(项金娟), Xiao-Lei Wang(王晓磊), Wen-Wu Wang(王文武), Jian-Qi Zhang(张建齐), Hua-Xiang Yin(殷华湘), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超)   

  1. 1 Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 National Center for Nanoscience and Technology, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2016-10-14 修回日期:2016-11-22 出版日期:2017-02-05 发布日期:2017-02-05
  • 通讯作者: Wen-Wu Wang E-mail:wangwenwu@ime.ac.cn
  • 基金资助:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016501) and the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

Xue-Li Ma(马雪丽)1,3, Hong Yang(杨红)1,3, Jin-Juan Xiang(项金娟)1,3, Xiao-Lei Wang(王晓磊)1,3, Wen-Wu Wang(王文武)1,3, Jian-Qi Zhang(张建齐)2, Hua-Xiang Yin(殷华湘)1,3, Hui-Long Zhu(朱慧珑)1,3, Chao Zhao(赵 超)1,3   

  1. 1 Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 National Center for Nanoscience and Technology, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-10-14 Revised:2016-11-22 Online:2017-02-05 Published:2017-02-05
  • Contact: Wen-Wu Wang E-mail:wangwenwu@ime.ac.cn
  • Supported by:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016501) and the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

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摘要：

In this work, ultrathin pure HfO2 and Al-doped HfO2 films (about 4-nm thick) are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO2 and Al-doped HfO2 films are both amorphous. After 550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO2 film while the Al-doped HfO2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

关键词: Al-doped HfO2 ultrathin film, phase transition, thermodynamics, kinetics

Abstract:

In this work, ultrathin pure HfO2 and Al-doped HfO2 films (about 4-nm thick) are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO2 and Al-doped HfO2 films are both amorphous. After 550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO2 film while the Al-doped HfO2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

Key words: Al-doped HfO2 ultrathin film, phase transition, thermodynamics, kinetics

中图分类号: 

  • 77.55.D-
81.40.-z (Treatment of materials and its effects on microstructure, nanostructure, And properties) 82.60.Nh (Thermodynamics of nucleation) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))