中国物理B ›› 2017, Vol. 26 ›› Issue (1): 15203-015203.doi: 10.1088/1674-1056/26/1/015203

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

N Yadav, S Ghosh, P S Malviya   

  1. 1. School of Studies in Physics, Vikram University, Ujjain 465010, India;
    2. Department of Physics, Govt. J. N. S. Post Graduate College, Shujalpur 465333, India
  • 收稿日期:2016-08-20 修回日期:2016-09-27 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: P S Malviya E-mail:psm_sehore@rediffmail.com

Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

N Yadav1,2, S Ghosh1,2, P S Malviya1,2   

  1. 1. School of Studies in Physics, Vikram University, Ujjain 465010, India;
    2. Department of Physics, Govt. J. N. S. Post Graduate College, Shujalpur 465333, India
  • Received:2016-08-20 Revised:2016-09-27 Online:2017-01-05 Published:2017-01-05
  • Contact: P S Malviya E-mail:psm_sehore@rediffmail.com

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摘要： We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10-14-10-12 m2·V-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.

关键词: nonlinear parametric interactions, ion-implanted semiconductor plasmas, strain-dependent dielectric constant

Abstract: We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10-14-10-12 m2·V-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.

Key words: nonlinear parametric interactions, ion-implanted semiconductor plasmas, strain-dependent dielectric constant

中图分类号:  (Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.))

  • 52.35.Mw
52.77.Dq (Plasma-based ion implantation and deposition) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)