中国物理B ›› 2016, Vol. 25 ›› Issue (9): 97307-097307.doi: 10.1088/1674-1056/25/9/097307

• SPECIAL TOPIC—Soft matter and biological physics (Review) • 上一篇    下一篇

Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

Wenqi Wang(王文奇), Lu Wang(王禄), Yang Jiang(江洋), Ziguang Ma(马紫光), Ling Sun(孙令), Jie Liu(刘洁), Qingling Sun(孙庆灵), Bin Zhao(赵斌), Wenxin Wang(王文新), Wuming Liu(刘伍明), Haiqiang Jia(贾海强), Hong Chen(陈弘)   

  1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2016-07-15 出版日期:2016-09-05 发布日期:2016-09-05
  • 通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205) and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).These authors contributed equally to this work.

Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

Wenqi Wang(王文奇), Lu Wang(王禄), Yang Jiang(江洋), Ziguang Ma(马紫光), Ling Sun(孙令), Jie Liu(刘洁), Qingling Sun(孙庆灵), Bin Zhao(赵斌), Wenxin Wang(王文新), Wuming Liu(刘伍明), Haiqiang Jia(贾海强), Hong Chen(陈弘)   

  1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2016-07-15 Online:2016-09-05 Published:2016-09-05
  • Contact: Hong Chen E-mail:hchen@iphy.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205) and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).These authors contributed equally to this work.

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摘要：

According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.

关键词: quantum dots, electronic transport, p-n junctions, photoluminescence

Abstract:

According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.

Key words: quantum dots, electronic transport, p-n junctions, photoluminescence

中图分类号:  (Quantum dots)

  • 73.21.La
73.63.-b (Electronic transport in nanoscale materials and structures) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.55.-m (Photoluminescence, properties and materials)