中国物理B ›› 2016, Vol. 25 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/25/8/088501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Fabrication of Al/AlOx/Al junctions using pre-exposure technique at 30-keV e-beam voltage

Dong Lan(兰栋), Guangming Xue(薛光明), Qiang Liu(刘强), Xinsheng Tan(谭新生), Haifeng Yu(于海峰), Yang Yu(于扬)   

  1. 1 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
    2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2016-02-23 修回日期:2016-04-07 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Guangming Xue, Haifeng Yu E-mail:xuegm123@163.com;hfyu@nju.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 91321310, 11274156, 11474152, 11474153, 61521001, and 11504165) and the State Key Basic Research Program of China (Grant Nos. 2011CB922104 and 2011CBA00205).

Fabrication of Al/AlOx/Al junctions using pre-exposure technique at 30-keV e-beam voltage

Dong Lan(兰栋)1, Guangming Xue(薛光明)1, Qiang Liu(刘强)1, Xinsheng Tan(谭新生)1, Haifeng Yu(于海峰)1,2, Yang Yu(于扬)1,2   

  1. 1 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
    2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2016-02-23 Revised:2016-04-07 Online:2016-08-05 Published:2016-08-05
  • Contact: Guangming Xue, Haifeng Yu E-mail:xuegm123@163.com;hfyu@nju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 91321310, 11274156, 11474152, 11474153, 61521001, and 11504165) and the State Key Basic Research Program of China (Grant Nos. 2011CB922104 and 2011CBA00205).

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摘要：

We fabricate high-quality Al/AlOx/Al junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage, in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique. The dose window is 5 times as large as that used in the usual Dolan bridge technique, making this technique much more robust. Similar results, comparable with those achieved using a 100-keV e-beam writer, are obtained, which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.

关键词: Josephson junction, pre-exposure, 30-keV E-beam voltage, superconducting qubit

Abstract:

We fabricate high-quality Al/AlOx/Al junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage, in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique. The dose window is 5 times as large as that used in the usual Dolan bridge technique, making this technique much more robust. Similar results, comparable with those achieved using a 100-keV e-beam writer, are obtained, which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.

Key words: Josephson junction, pre-exposure, 30-keV E-beam voltage, superconducting qubit

中图分类号:  (Josephson devices)

  • 85.25.Cp
03.67.Lx (Quantum computation architectures and implementations) 85.25.Am (Superconducting device characterization, design, and modeling)