中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67102-067102.doi: 10.1088/1674-1056/25/6/067102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红)   

  1. Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2015-11-26 修回日期:2016-01-31 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Jian-hong Yang E-mail:yangjh@lzu.edu.cn

Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红)   

  1. Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China
  • Received:2015-11-26 Revised:2016-01-31 Online:2016-06-05 Published:2016-06-05
  • Contact: Jian-hong Yang E-mail:yangjh@lzu.edu.cn

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摘要：

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated，in which polysilicon is sandwiched between oxide layers as a floating gate. Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed. The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing (P/E) operations at various P/E voltages are discussed. The simulated results show that present memory exhibits a large memory window of 57.5 V, and a high read current on/off ratio of ≈ 103. Compared with the reported experimental results, these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects, which shows great promise in device designing and practical application.

关键词: organic floating gate memory, polysilicon floating gate, programing and erasing operations, device simulation

Abstract:

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated，in which polysilicon is sandwiched between oxide layers as a floating gate. Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed. The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing (P/E) operations at various P/E voltages are discussed. The simulated results show that present memory exhibits a large memory window of 57.5 V, and a high read current on/off ratio of ≈ 103. Compared with the reported experimental results, these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects, which shows great promise in device designing and practical application.

Key words: organic floating gate memory, polysilicon floating gate, programing and erasing operations, device simulation

中图分类号:  (Methods of electronic structure calculations)

  • 71.15.-m
73.22.-f (Electronic structure of nanoscale materials and related systems) 73.50.-h (Electronic transport phenomena in thin films) 74.20.Pq (Electronic structure calculations)