中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27301-027301.doi: 10.1088/1674-1056/25/2/027301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Polarization-independent terahertz wave modulator based on graphene-silicon hybrid structure

Liang-Liang Du(杜亮亮), Quan Li(李泉), Shao-Xian Li(李绍限), Fang-Rong Hu(胡放荣), Xian-Ming Xiong(熊显名), Yan-Feng Li(栗岩锋), Wen-Tao Zhang(张文涛), Jia-Guang Han(韩家广)   

  1. 1. College of Electrical Engineering and Automation, Guilin University of Electronic Technology, Guilin 541000, China;
    2. Center for Terahertz Wave, Key Laboratory of Opto-electronic Information Technology, Ministry of Education, College of PrecisionInstrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2015-08-21 修回日期:2015-10-15 出版日期:2016-02-05 发布日期:2016-02-05
  • 通讯作者: Wen-Tao Zhang E-mail:gliezwt@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China, (Grant No. 61565004), the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant Nos. 2013GXNSFDA019002 and 2014GXNSFGA118003), the Guangxi Scientific Research and Technology Development Program, China (Grant No. 1598017-1), the Guilin Scientific Research and Technology Development Program, China (Grant Nos. 20140127-1 and 20150133-3), and the Special Funds for Distinguished Experts of Guangxi Zhuang Autonomous Region, China.

Polarization-independent terahertz wave modulator based on graphene-silicon hybrid structure

Liang-Liang Du(杜亮亮)1,2, Quan Li(李泉)2, Shao-Xian Li(李绍限)2, Fang-Rong Hu(胡放荣)1, Xian-Ming Xiong(熊显名)1, Yan-Feng Li(栗岩锋)1, Wen-Tao Zhang(张文涛)1, Jia-Guang Han(韩家广)2   

  1. 1. College of Electrical Engineering and Automation, Guilin University of Electronic Technology, Guilin 541000, China;
    2. Center for Terahertz Wave, Key Laboratory of Opto-electronic Information Technology, Ministry of Education, College of PrecisionInstrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
  • Received:2015-08-21 Revised:2015-10-15 Online:2016-02-05 Published:2016-02-05
  • Contact: Wen-Tao Zhang E-mail:gliezwt@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China, (Grant No. 61565004), the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant Nos. 2013GXNSFDA019002 and 2014GXNSFGA118003), the Guangxi Scientific Research and Technology Development Program, China (Grant No. 1598017-1), the Guilin Scientific Research and Technology Development Program, China (Grant Nos. 20140127-1 and 20150133-3), and the Special Funds for Distinguished Experts of Guangxi Zhuang Autonomous Region, China.

RichHTML

0

PDF (PC)

472

赞

摘要： In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating. Under a pump power of 400 mW and the voltages ranging from -1.8 V to 1.4 V, modulation depths in a range of -23%-62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current-voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.

关键词: terahertz, modulator, graphene

Abstract: In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating. Under a pump power of 400 mW and the voltages ranging from -1.8 V to 1.4 V, modulation depths in a range of -23%-62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current-voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.

Key words: terahertz, modulator, graphene

中图分类号:  (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))

  • 73.20.Mf
42.25.Bs (Wave propagation, transmission and absorption) 78.66.-w (Optical properties of specific thin films)