Charge transport and bipolar switching mechanismin a Cu/HfO2/Pt resistive switching cell

doi:10.1088/1674-1056/25/11/117306

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117306-117306.doi: 10.1088/1674-1056/25/11/117306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell

Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂)

State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2016-02-23 修回日期:2016-08-17 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Tingting Tan E-mail:tantt@nwpu.edu.cn
基金资助:
Project supported by the Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China (Grant No. 155-QP-2016), the Fundamental Research Funds for the Central Universities of China (Grant No. 3102014JCQ01032), and the 111 Project of China (Grant No. B08040).

Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell

Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂)

State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Received:2016-02-23 Revised:2016-08-17 Online:2016-11-05 Published:2016-11-05
Contact: Tingting Tan E-mail:tantt@nwpu.edu.cn
Supported by:
Project supported by the Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China (Grant No. 155-QP-2016), the Fundamental Research Funds for the Central Universities of China (Grant No. 3102014JCQ01032), and the 111 Project of China (Grant No. B08040).

摘要/Abstract

摘要： Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO₂/Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO₂ interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO₂/Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO₂ film are responsible for the resistance change.

关键词: HfO₂ film, resistive switching mechanism, chemical structure

Abstract: Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO₂/Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO₂ interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO₂/Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO₂ film are responsible for the resistance change.

Key words: HfO₂ film, resistive switching mechanism, chemical structure

中图分类号: (Metal-insulator-metal structures)

73.40.Rw

72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

谭婷婷, 郭婷婷, 吴志会, 刘正堂. Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell[J]. 中国物理B, 2016, 25(11): 117306-117306.

Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂). Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell[J]. Chin. Phys. B, 2016, 25(11): 117306-117306.

参考文献 14

[1]	Waser R and Aono M 2007 Nat. Mater. 6 833
[2]	Lei X, Liu H, Gao H, Yang H, Wang G, Long S, Ma X and Liu M 2014 Chin. Phys. B 23 117305
[3]	Kuzum D, Yu S and Wong H 2013 Nanotechnol. 24 382001
[4]	Luo W C, Hou T H, Lin K L, Lee Y J and Lei T F 2013 Solid-State Electron. 89 167
[5]	Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
[6]	Valov I, Waser R, Jameson J R and Kozicki M N 2011 Nanotechnol. 22 254003
[7]	Bersuker G, Gilmer D C, Veksler D, Kirsch P, Vandelli L and Padovani A 2011 J. Appl. Phys. 110 124518
[8]	Yu Y, Matveyev A, MarkeevA M, Lebedinskii Y Y, Chouprik A A, Egorov K V, Drube W and Zenkevich A V 2014 Thin Solid Films 563 20
[9]	Liu Q, Guan W H, Long S B, Jia R, Liu M and Chen J N 2008 Appl. Phys. Lett. 92 012117
[10]	Walczyk C, Walcayk D, Schroeder T, Bertaud T, Sowińska M, Lukosius M, Fraschke M, Wolansky D, Tillack B, Miranda E and Wenger C 2011 IEEE Trans. Electron Dev. 58 3124
[11]	Panzner G, Egert B and Schmidt H P 1985 Surf. Sci. 151 400
[12]	Nagata T, Haemori M, Yamashita Y, Yoshikawa H, IwashitaY, Kobayashi K and Chikyow T 2011 Appl. Phys. Lett. 99 223517
[13]	Pang H and Ning D 2014 Chin. Phys. Lett. 31 107303
[14]	Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T and Besson P 2002 Appl. Phys. Lett. 81 3627

Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell

Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 14

相关文章 4

Metrics

本文评价

推荐阅读 0

[1]	Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition[J]. 中国物理B, 2021, 30(5): 50703-050703.
[2]	杨蕊. Review of resistive switching mechanisms for memristive neuromorphic devices[J]. 中国物理B, 2020, 29(9): 97305-097305.
[3]	黄达, 吴俊杰, 唐玉华. Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor[J]. 中国物理B, 2014, 23(3): 38404-038404.
[4]	黄达, 吴俊杰, 唐玉华. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory[J]. 中国物理B, 2013, 22(3): 38401-038401.