[1] |
Guzmán-Verri G G and Voon L L Y 2007 Phys. Rev. B 76 075131
|
[2] |
Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S A, Grigorieva I V and Firsov A A 2004 Science 306 666
|
[3] |
Cahangirov S, Topsakal M, Aktrk E, Şahin H and Ciraci S 2009 Phys. Rev. Lett. 102 236804
|
[4] |
Ezawa M 2012 New. J. Phys. 14 033003
|
[5] |
Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
|
[6] |
Huang B, Deng H X, Lee H, Yoon M, Sumpter B G, Liu F, Sean C S and Wei S H 2014 Phys. Rev. X 4 021029
|
[7] |
Topsakal M and Ciraci S 2010 Phys. Rev. B 81 024107
|
[8] |
Qin R, Wang C H, Zhu W and Zhang Y 2012 AIP. Adv. 2 022159
|
[9] |
Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A and Akinwande D 2015 Nature 10 227
|
[10] |
Chaudhry A and Kumar M J 2004 IEEE Trans. Dev. Mater. Rel. 4 99
|
[11] |
2013 International Technology Roadmap for Semiconductors [Online] http://www.itrs.net
|
[12] |
Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y and Wong H S P 2001 Proc. IEEE 89 259
|
[13] |
Song Y L, Zhang Y, Zhang J M and Lu D B 2010 Appl. Surf. Sci. 256 6313
|
[14] |
van den Broek B, Houssa M, Pourtois G, Afanas'ev V V and Stesmans A 2014 Phys. Status Solidi RRL 8 931
|
[15] |
Kaneko S, Tsuchiya H, Kamakura Y, Mori N and Ogawa M 2014 Appl. Phys. Express 7 035102
|
[16] |
Sadeghi H 2014 J. Nanosci. Nanotechnol. 14 4178
|
[17] |
Datta S 2005 Quantum Transport: Atom to Transistor (Cambridge: Cambridge University Press)
|
[18] |
Fiori G and Iannaccone G 2005 J. Comput. Electron. 4 63
|
[19] |
Yoon Y, Fiori G, Hong S, Iannaccone G and Guo J 2008 IEEE Trans. Electron. Dev. 55 2314
|
[20] |
Hohenberg P and Kohn W 1964 Phys. Rev. 136 B864
|
[21] |
Kliros G S 2013 Microelectron. Eng. 112 220
|
[22] |
Cahangirov S, Topsakal M and Ciraci S 2010 Phys. Rev. B 81 195120
|
[23] |
Han M Y, Ozyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
|
[24] |
Kang J, He Y, Zhang J, Yu X, Guan X and Yu Z 2010 Appl. Phys. Lett. 96 252105
|
[25] |
Harrison W A 1999 Elementary Electronic Structure (World Scientific)
|
[26] |
Sancho M L, Sancho J L, Sancho J L and Rubio J 1985 J. Phys. F: Met. Phys. 15 851
|
[27] |
Fisher D S and Lee P A 1981 Phys. Rev. B 23 6851
|
[28] |
Schwierz F 2010 Nature 5 487
|
[29] |
Pati S K, Koley K, Dutta A, Mohankumar N and Sarkar C K 2014 Microelectron. Reliab. 54 1137
|
[30] |
Khaledian M, Ismail R, Saeidmanesh M, Ahmadi M T and Akbari E 2014 J. Nanomater 101
|
[31] |
Ouyang Y, Yoon Y and Guo J 2007 IEEE Trans. Electron. Dev. 54 2223
|
[32] |
Taur Y and Ning T H 2009 Fundamentals of Modern VLSI Devices (Cambridge: Cambridge University Press)
|
[33] |
Fiori G and Iannaccone G 2007 IEEE Electron. Dev. Lett. 28 760
|
[34] |
Wang J, Zhao R, Yang M, Liu Z and Liu Z 2013 J. Chem. Phys. 138 084701
|
[35] |
Zhu W, Perebeinos V, Freitag M and Avouris P 2009 Phys. Rev. B 80 235402
|
[36] |
Chau R, Datta S, Doczy M, Doyle B, Jin B, Kavalieros J, Majumdar A, Metz M and Radosavljevic M 2005 IEEE Trans. Nanotechnol. 4 153
|
[37] |
Saito R, Dresselhaus G and Dresselhaus M S 1998 Physical Properties of Carbon Nanotubes (London: Imperial College Press)
|