中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67303-067303.doi: 10.1088/1674-1056/24/6/067303

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇    下一篇

Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

汪莱, 杨迪, 郝智彪, 罗毅   

  1. Tsinghua National Laboratory on Information Science and Technology and Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2015-01-20 修回日期:2015-02-06 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB632804, 2011CB301900, and 2012CB3155605), the National Natural Science Foundation of China (Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024, and 61176059), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

Wang Lai (汪莱), Yang Di (杨迪), Hao Zhi-Biao (郝智彪), Luo Yi (罗毅)   

  1. Tsinghua National Laboratory on Information Science and Technology and Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2015-01-20 Revised:2015-02-06 Online:2015-06-05 Published:2015-06-05
  • Contact: Wang Lai E-mail:wanglai@tsinghua.edu.cn
  • About author:73.40.Kp; 78.55.Cr; 78.60.Fi; 78.67.Hc
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB632804, 2011CB301900, and 2012CB3155605), the National Natural Science Foundation of China (Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024, and 61176059), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

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摘要：

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal–organic–vapor phase epitaxy (MOVPE), which is challenge due to the lack of 、itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

关键词: InGaN, quantum dot, light emitting diode, MOVPE

Abstract:

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal–organic–vapor phase epitaxy (MOVPE), which is challenge due to the lack of 、itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

Key words: InGaN, quantum dot, light emitting diode, MOVPE

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
78.55.Cr (III-V semiconductors) 78.60.Fi (Electroluminescence) 78.67.Hc (Quantum dots)