Design of patterned sapphire substrates for GaN-based light-emitting diodes

doi:10.1088/1674-1056/24/6/067103

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67103-067103.doi: 10.1088/1674-1056/24/6/067103

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇下一篇

Design of patterned sapphire substrates for GaN-based light-emitting diodes

王海燕^a, 林志霆^a, 韩晶磊^a, 钟立义^a, 李国强^{a b}

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China;
b Department of Electronic Materials, South China University of Technology, Guangzhou 510641, China

收稿日期:2015-02-13 修回日期:2014-03-28 发布日期:2015-06-25
基金资助:
Project supported by the National Natural Science Fundation for Excellent Young Scholars of China (Grant No. 51422203), the National Natural Science Foundation of China (Grant No. 51372001), the Outstanding Youth Foundation of Guangdong Scientific Committee (Grant No. S2013050013882), and the Strategic Special Funds for LEDs of Guangdong Province, China (Grant Nos. 2011A081301010, 2011A081301012, 2012A080302002, and 2012A080302004).

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Wang Hai-Yan (王海燕)^a, Lin Zhi-Ting (林志霆)^a, Han Jing-Lei (韩晶磊)^a, Zhong Li-Yi (钟立义)^a, Li Guo-Qiang (李国强)^{a b}

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China;
b Department of Electronic Materials, South China University of Technology, Guangzhou 510641, China

Received:2015-02-13 Revised:2014-03-28 Published:2015-06-25
Contact: Li Guo-Qiang E-mail:msgli@scut.edu.cn
About author:71.55.Eq; 78.30.Fs
Supported by:
Project supported by the National Natural Science Fundation for Excellent Young Scholars of China (Grant No. 51422203), the National Natural Science Foundation of China (Grant No. 51372001), the Outstanding Youth Foundation of Guangdong Scientific Committee (Grant No. S2013050013882), and the Strategic Special Funds for LEDs of Guangdong Province, China (Grant Nos. 2011A081301010, 2011A081301012, 2012A080302002, and 2012A080302004).

摘要/Abstract

摘要：

A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs' luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs' light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

关键词: light-emitting diode (LED), patterned sapphire substrate (PSS), pattern design, computer simulation

Abstract:

Key words: light-emitting diode (LED), patterned sapphire substrate (PSS), pattern design, computer simulation

中图分类号: (III-V semiconductors)

71.55.Eq

78.30.Fs (III-V and II-VI semiconductors)

王海燕, 林志霆, 韩晶磊, 钟立义, 李国强. Design of patterned sapphire substrates for GaN-based light-emitting diodes[J]. 中国物理B, 2015, 24(6): 67103-067103.

Wang Hai-Yan (王海燕), Lin Zhi-Ting (林志霆), Han Jing-Lei (韩晶磊), Zhong Li-Yi (钟立义), Li Guo-Qiang (李国强). Design of patterned sapphire substrates for GaN-based light-emitting diodes[J]. Chin. Phys. B, 2015, 24(6): 67103-067103.

参考文献 44

[1]	Pimputkar S, Speck J S, Denbaars S P and Nakamura S 2009 Nat. Photon. 3 180
[2]	Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y and Zheng Y D 2011 Chin. Phys. B 20 116801
[3]	Liu M G, Wang Y Q, Yang Y B, Lin X Q, Xiang P, Chen W J, Han X B, Zang W J, Liao Q, Lin J L, Luo H, Wu Z S, Liu Y and Zhang B J 2015 Chin. Phys. B 24 038503
[4]	Liu L and Edgar J H 2002 Mater. Sci. Eng. R: Reports 37 61
[5]	Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, Denbaars S P and Speck J S 1996 Appl. Phys. Lett. 68 643
[6]	Nakamura S 1998 Science 281 956
[7]	Zhmakin A I 2011 Phys. Rep. 498 189
[8]	Benisty H, De Neve H and Weisbuch C 1998 IEEE J. Quantum Electron. 34 1612
[9]	Hiramatsu K, Nishiyama K, Onishi M, Mizutani H, Narukawa M, Motogaito A, Miyake H, Iyechika Y and Maeda T 2000 J. Cryst. Growth 221 316
[10]	Marchand H, Wu X H, Ibbetson J P, Fini P T, Kozodoy P, Keller S, Speck J S, Denbaars S P and Mishra U K 1998 Appl. Phys. Lett. 73 747
[11]	Hiramatsu K, Nishiyama K, Motogaito A, Miyake H, Iyechika Y and Maeda T 1999 Phys. Solidi State A 176 535
[12]	Le L C, Zhao D G, Wu L L, Deng Y, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Zhang B S and Yang H 2011 Chin. Phys. B 20 127306
[13]	Wang C H, Chang S P, Ku P H, Li J C, Lan Y P, Lin C C, Yang H C, Kuo H C, Lu T C, Wang S C and Chang C Y 2011 Appl. Phys. Lett. 99 171106
[14]	Kuo Y, Chang J, Tsai M and Yen S 2009 Appl. Phys. Lett. 95 11116
[15]	Huang X H, Liu J P, Fan Y M, Kong J J, Yang H and Wang H B 2012 Chin. Phys. B 21 037105
[16]	Ashby C I H, Mitchell C C, Han J, Missert N A, Provencio P P, Follstaedt D M, Peake G M and Griego L 2000 Appl. Phys. Lett. 77 3233
[17]	Nakada N, Nakaji M, Ishikawa H, Egawa T, Umeno M and Jimbo T 2000 Appl. Phys. Lett. 76 1804
[18]	David A, Meier C, Sharma R, Diana F S, Denbaars S P, Hu E, Nakamura S, Weisbuch C and Benisty H 2005 Appl. Phys. Lett. 87 101107
[19]	He A H, Zhang Y, Zhu X H, Chen X W, Fan G H and He M 2010 Chin. Phys. B 19 068101
[20]	Shchekin O B, Epler J E, Trottier T A, Margalith T, Steigerwald D A, Holcomb M O, Martin P S and Krames M R 2006 Appl. Phys. Lett. 89 71109
[21]	Lester S D, Ponce F A, Craford M G and Steigerwald D A 1995 Appl. Phys. Lett. 66 1249
[22]	Dai Q, Schubert M F, Kim M H, Kim J K, Schubert E F, Koleske D D, Crawford M H, Lee S R, Fischer A J, Thaler G and Banas M A 2009 Appl. Phys. Lett. 94 111109
[23]	Wang M, Liao K and Li Y L 2011 IEEE Photon. Technol. Lett. 23 962
[24]	Pan C, Hsieh C, Lin C and Chyi J 2007 J. Appl. Phys. 102 84503
[25]	Belardini A, Pannone F, Leahu G, Larciprete M C, Centini M, Sibilia C, Martella C, Giordano M, Chiappe D and Buatier De Mongeot F 2012 Appl. Phys. Lett. 100 251109
[26]	Fujii T, Gao Y, Sharma R, Hu E L, Denbaars S P and Nakamura S 2004 Appl. Phys. Lett. 84 855
[27]	Jiang Y, Jia H, Wang W, Wang L and Chen H 2011 Energy Environ. Sci. 4 2625
[28]	Torma P T, Ali M, Svensk O, Suihkonen S, Sopanen M, Lipsanen H, Mulot M, Odnoblyudov M A and Bougrov V E 2010 CrystEngComm 12 3152
[29]	Gao H, Yan F, Zhang Y, Li J, Zeng Y and Wang G 2008 Solid State Electron. 52 962
[30]	Bo Lee S, Kwon T, Lee S, Park J and Choi W 2011 Appl. Phys. Lett. 99 211901
[31]	Zhou S, Lin Z, Wang H, Qiao T, Zhong L, Lin Y, Wang W, Yang W and Li G 2014 J. Alloys Compd. 610 498
[32]	Zhou S, Wang H, Lin Z, Yang H, Hong X and Li G 2014 Jpn. J. Appl. Phys. 53 25503
[33]	Lee J, Lee D, Oh B and Lee J 2010 IEEE Trans. Electron Dev. 57 157
[34]	Cheng J, Wu Y S, Liao W and Lin B 2010 Appl. Phys. Lett. 96 51109
[35]	Hagedorn S, Richter E, Zeimer U, Prasai D, John W and Weyers M 2012 J. Cryst. Growth 353 129
[36]	Cho J, Kim H, Kim H, Lee J W, Yoon S, Sone C, Park Y and Yoon E 2005 Phys. Status Solidi C 2 2874
[37]	Lee J, Oh J, Park J, Kim J, Kim Y, Lee J and Cho H 2006 Phys. Status Solidi c 3 2169
[38]	Jeong S, Kissinger S, Kim D, Jae Lee S, Kim J, Ahn H and Lee C 2010 J. Cryst. Growth 312 258
[39]	Shin H, Kwon S K, Chang Y I, Cho M J and Park K H 2009 J. Cryst. Growth 311 4167
[40]	Lee J, Oh J T, Kim Y C and Lee J 2008 IEEE Photon. Technol. Lett. 20 1563
[41]	Xu S R, Li P X, Zhang J C, Jiang T, Ma J J, Lin Z Y and Hao Y 2014 J. Alloys Compd. 614 360
[42]	Lin Z, Yang H, Zhou S, Wang H, Hong X and Li G 2012 Cryst. Growth Des. 12 2836
[43]	Wang H, Zhou S, Lin Z, Hong X and Li G 2013 Jpn. J. Appl. Phys. 52 92101
[44]	Wang H, Zhou S, Lin Z, Qiao T, Zhong L, Wang K, Hong X and Li G 2014 RSC Adv. 4 41942

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Design of patterned sapphire substrates for GaN-based light-emitting diodes

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 44

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	宋驰, 孔祥山, 刘长松. First-principles studies on carbon diffusion in tungsten[J]. 中国物理B, 2019, 28(11): 116106-116106.
[2]	鲍磊, 张曦, 金雷, 谭志杰. Flexibility of nucleic acids: From DNA to RNA[J]. 中国物理B, 2016, 25(1): 18703-018703.
[3]	Sibel Gokce, Ozhan Kayacan. Study on bi-directional pedestrian movement using ant algorithms[J]. 中国物理B, 2016, 25(1): 10508-010508.
[4]	张泳辉, 彭俊辉, 张志勇. Structural modeling of proteins by integrating small-angle x-ray scattering data[J]. 中国物理B, 2015, 24(12): 126101-126101.
[5]	丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 张运炎, 许毅钦, 周德涛, 喻晓鹏, 张瀚翔, 张涛, 范广涵. Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer[J]. 中国物理B, 2013, 22(8): 88503-088503.
[6]	王波, 宿世臣, 何苗, 陈弘, 吴汶波, 张伟伟, 王巧, 陈虞龙, 高优, 张力, 朱克宝, 雷严. Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching[J]. 中国物理B, 2013, 22(10): 106802-106802.
[7]	陆海波, 刘伟强 . Numerical investigation on properties of attack angle for opposing jet thermal protection system[J]. 中国物理B, 2012, 21(8): 84401-084401.
[8]	S. B. Khasare. A comprehensive approach to an equation of state for hard spheres and Lennard–Jones fluids[J]. 中国物理B, 2011, 20(8): 85101-085101.
[9]	张林, 李蔚, 王绍青. Coalescence between Cu₅₇ and Cu₅₈ clusters at a room temperature: molecular dynamics simulations[J]. 中国物理B, 2010, 19(7): 73601-073601.
[10]	魏小丹, 蔡丽艳, 鲁法春, 陈小龙, 陈学元, 刘泉林. Structure and luminescence of Ca₂Si₅N₈:Eu²⁺ phosphor for warm white light-emitting diodes[J]. 中国物理B, 2009, 18(8): 3555-3562.
[11]	肖松, 蔡九菊, 刘飞. Zone inhomogeneity with the random asymmetric simple exclusion process in a one-lane system[J]. 中国物理B, 2009, 18(11): 4613-4621.
[12]	龚依民, 蓝志环, 闫羽, 杜晓波, 王文全, 王学凤, 苏峰, 卢磊, 张之胜, 金汉民, 温戈辉. Angular dependence of coercivity of grains in nanocrystalline permanent magnets[J]. 中国物理B, 2008, 17(3): 1130-1134.
[13]	张林, 张彩碚, 祁阳. Local structure changes of Cu₅₅ cluster during heating[J]. 中国物理B, 2007, 16(1): 77-82.
[14]	黄乒花, 孔令江, 刘慕仁. A study of a main-road cellular automata traffic flow model[J]. 中国物理B, 2002, 11(7): 678-683.
[15]	张涛, 郭达勤, 朱剑豪, I. G. Brown. THE INFLUENCE OF ELECTRON OSCILLATION ON PLASMA TRANSPORT THROUGH A MAGNETIC DUCT[J]. 中国物理B, 2001, 10(4): 320-323.