Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

doi:10.1088/1674-1056/24/12/128706

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 128706-128706.doi: 10.1088/1674-1056/24/12/128706

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

荣曦明^a, 陈骏^{b c}, 李菁田^{b c}, 庄军^a, 宁西京^{b c}

a Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China;
b Institute of Modern Physics, Fudan University, Shanghai 200433, China;
c Applied Ion Beam Physics Laboratory, Key Laboratory of the Ministry of Education, Fudan University, Shanghai 200433, China

收稿日期:2015-05-27 修回日期:2015-08-12 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Ning Xi-Jing E-mail:xjning@fudan.edu.cn
基金资助:
Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130071110018) and the National Natural Science Foundation of China (Grant No. 11274073).

Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

Rong Xi-Ming (荣曦明)^a, Chen Jun (陈骏)^{b c}, Li Jing-Tian (李菁田)^{b c}, Zhuang Jun (庄军)^a, Ning Xi-Jing (宁西京)^{b c}

a Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China;
b Institute of Modern Physics, Fudan University, Shanghai 200433, China;
c Applied Ion Beam Physics Laboratory, Key Laboratory of the Ministry of Education, Fudan University, Shanghai 200433, China

Received:2015-05-27 Revised:2015-08-12 Online:2015-12-05 Published:2015-12-05
Contact: Ning Xi-Jing E-mail:xjning@fudan.edu.cn
Supported by:
Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130071110018) and the National Natural Science Foundation of China (Grant No. 11274073).

摘要/Abstract

摘要：

Recently, a condensing potential model was developed to evaluate the crystallization ability of bulk materials [Ye X X, Ming C, Hu Y C and Ning X J 2009 J. Chem. Phys. 130 164711 and Peng K, Ming C, Ye X X, Zhang W X, Zhuang J and Ning X J 2011 Chem. Phys. Lett. 501 330], showing that the best temperature for single crystal growth is about 0.6 T_m, where T_m is the melting temperature, and for Ni-Al alloy, more than 6 wt% of Al-doping will badly reduce the crystallization ability. In order to verify these predictions, we fabricated Ni-Al films with different concentrations of Al on Si substrates at room temperature by pulsed laser deposition, and post-annealed the films at 833, 933, 1033 (～ 0.6 T_m), 1133, and 1233 K in vacuum furnace, respectively. The x-ray diffraction spectra show that annealing at 0.6 T_m is indeed best for larger crystal grain formation, and the film crystallization ability remarkably declines with more than 6-wt% Al doping.

关键词: condensing potential model, Ni-Al alloy, crystallization ability, pulsed laser deposition

Abstract:

Key words: condensing potential model, Ni-Al alloy, crystallization ability, pulsed laser deposition

中图分类号: (Crystallization)

87.15.nt

81.15.Fg (Pulsed laser ablation deposition) 61.05.cp (X-ray diffraction)

荣曦明, 陈骏, 李菁田, 庄军, 宁西京. Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model[J]. 中国物理B, 2015, 24(12): 128706-128706.

Rong Xi-Ming (荣曦明), Chen Jun (陈骏), Li Jing-Tian (李菁田), Zhuang Jun (庄军), Ning Xi-Jing (宁西京). Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model[J]. Chin. Phys. B, 2015, 24(12): 128706-128706.

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Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

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