Influence of defects in SiC (0001) on epitaxial graphene

doi:10.1088/1674-1056/23/8/086501

中国物理B ›› 2014, Vol. 23 ›› Issue (8): 86501-086501.doi: 10.1088/1674-1056/23/8/086501

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Influence of defects in SiC (0001) on epitaxial graphene

郭钰, 郭丽伟, 芦伟, 黄郊, 贾玉萍, 孙伟, 李治林, 王逸非

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2014-03-18 修回日期:2014-05-08 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700), the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22), and the National Natural Science Foundation of China (Grant Nos. 51272279 and 51072223).

Influence of defects in SiC (0001) on epitaxial graphene

Guo Yu (郭钰), Guo Li-Wei (郭丽伟), Lu Wei (芦伟), Huang Jiao (黄郊), Jia Yu-Ping (贾玉萍), Sun Wei (孙伟), Li Zhi-Lin (李治林), Wang Yi-Fei (王逸非)

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2014-03-18 Revised:2014-05-08 Online:2014-08-15 Published:2014-08-15
Contact: Guo Li-Wei E-mail:lwguo@iphy.ac.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700), the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22), and the National Natural Science Foundation of China (Grant Nos. 51272279 and 51072223).

摘要/Abstract

摘要： Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.

关键词: graphene, silicon carbide, defect

Abstract: Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.

Key words: graphene, silicon carbide, defect

中图分类号: (Thermal properties of crystalline solids)

65.40.-b

68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics)

郭钰, 郭丽伟, 芦伟, 黄郊, 贾玉萍, 孙伟, 李治林, 王逸非. Influence of defects in SiC (0001) on epitaxial graphene[J]. 中国物理B, 2014, 23(8): 86501-086501.

Guo Yu (郭钰), Guo Li-Wei (郭丽伟), Lu Wei (芦伟), Huang Jiao (黄郊), Jia Yu-Ping (贾玉萍), Sun Wei (孙伟), Li Zhi-Lin (李治林), Wang Yi-Fei (王逸非). Influence of defects in SiC (0001) on epitaxial graphene[J]. Chin. Phys. B, 2014, 23(8): 86501-086501.

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Influence of defects in SiC (0001) on epitaxial graphene

Influence of defects in SiC (0001) on epitaxial graphene

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