Computation of the locus crossing point location of MC circuit

doi:10.1088/1674-1056/23/4/048401

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48401-048401.doi: 10.1088/1674-1056/23/4/048401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Computation of the locus crossing point location of MC circuit

刘海军, 李智炜, 步凯, 孙兆林, 聂洪山

College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China

收稿日期:2013-09-03 修回日期:2013-09-18 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

Computation of the locus crossing point location of MC circuit

Liu Hai-Jun (刘海军), Li Zhi-Wei (李智炜), Bu Kai (步凯), Sun Zhao-Lin (孙兆林), Nie Hong-Shan (聂洪山)

College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China

Received:2013-09-03 Revised:2013-09-18 Online:2014-04-15 Published:2014-04-15
Contact: Liu Hai-Jun E-mail:liuhaijun@nudt.edu.cn
About author:84.30.Bv; 85.35.-p; 84.32.-y
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

摘要/Abstract

摘要： In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor (MC) circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.

关键词: memristor, memristive system, crossing point, pinched hysteresis loop

Abstract: In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor (MC) circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.

Key words: memristor, memristive system, crossing point, pinched hysteresis loop

中图分类号: (Circuit theory)

84.30.Bv

85.35.-p (Nanoelectronic devices) 84.32.-y (Passive circuit components)

刘海军, 李智炜, 步凯, 孙兆林, 聂洪山. Computation of the locus crossing point location of MC circuit[J]. 中国物理B, 2014, 23(4): 48401-048401.

Liu Hai-Jun (刘海军), Li Zhi-Wei (李智炜), Bu Kai (步凯), Sun Zhao-Lin (孙兆林), Nie Hong-Shan (聂洪山). Computation of the locus crossing point location of MC circuit[J]. Chin. Phys. B, 2014, 23(4): 48401-048401.

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Computation of the locus crossing point location of MC circuit

Computation of the locus crossing point location of MC circuit

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