中国物理B ›› 2014, Vol. 23 ›› Issue (4): 47504-047504.doi: 10.1088/1674-1056/23/4/047504

所属专题： TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research

• SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters • 上一篇    下一篇

Anomalous Hall effect in perpendicular CoFeB thin films

朱涛   

  1. Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2014-02-18 修回日期:2014-03-20 出版日期:2014-04-15 发布日期:2014-04-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 50871120, 11079052, and 11174354).

Anomalous Hall effect in perpendicular CoFeB thin films

Zhu Tao (朱涛)   

  1. Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2014-02-18 Revised:2014-03-20 Online:2014-04-15 Published:2014-04-15
  • Contact: Zhu Tao E-mail:tzhu@iphy.ac.cn
  • About author:75.47.-m; 75.30.Gw; 75.70.Cn; 75.25.+z
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 50871120, 11079052, and 11174354).

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摘要： Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.

关键词: anomalous Hall effect, perpendicular magnetic anisotropy, magnetic properties of interfaces

Abstract: Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.

Key words: anomalous Hall effect, perpendicular magnetic anisotropy, magnetic properties of interfaces

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

  • 75.47.-m
75.30.Gw (Magnetic anisotropy) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))