Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

doi:10.1088/1674-1056/23/4/047304

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/23/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Ibrahim Yücedağ^a, Ahmet Kaya^b, Şemsettin Altındal^c, Ibrahim Uslu^d

a Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;
b Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;
c Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey;
d Department of Chemistry, Faculty of Science and Arts, Gazi University, Ankara, Turkey

收稿日期:2013-06-25 修回日期:2013-08-26 出版日期:2014-04-15 发布日期:2014-04-15

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Ibrahim Yücedağ^a, Ahmet Kaya^b, Şemsettin Altındal^c, Ibrahim Uslu^d

a Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;
b Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;
c Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey;
d Department of Chemistry, Faculty of Science and Arts, Gazi University, Ankara, Turkey

Received:2013-06-25 Revised:2013-08-26 Online:2014-04-15 Published:2014-04-15
Contact: Ahmet Kaya E-mail:ahmetkaya0107@hotmail.com
About author:73.61.Ph; 77.84.Nh; 78.20.Ci; 78.40.Me

摘要/Abstract

摘要： In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (D_it) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and-5 V-6 V, respectively. C-V or ε '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of D_it, the other to the series resistance (R_s), and interfacial layer. Both the real and imaginary parts of dielectric constant (ε ' and ε") and electric modulus (M' and M"), loss tangent (tan δ), and AC electrical conductivity (σ_ac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M" versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the D_it and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of D_it is obtained from the low-high frequency capacitance (C_LF-C_HF) method.

关键词: Al/Co-PVA/p-Si (MPS), electrical and dielectric properties, AC electrical conductivity, frequency and voltage dependence

Abstract: In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (D_it) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and-5 V-6 V, respectively. C-V or ε '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of D_it, the other to the series resistance (R_s), and interfacial layer. Both the real and imaginary parts of dielectric constant (ε ' and ε") and electric modulus (M' and M"), loss tangent (tan δ), and AC electrical conductivity (σ_ac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M" versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the D_it and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of D_it is obtained from the low-high frequency capacitance (C_LF-C_HF) method.

Key words: Al/Co-PVA/p-Si (MPS), electrical and dielectric properties, AC electrical conductivity, frequency and voltage dependence

中图分类号: (Polymers; organic compounds)

73.61.Ph

77.84.Nh (Liquids, emulsions, and suspensions; liquid crystals) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.40.Me (Organic compounds and polymers)

Ibrahim Yücedağ, Ahmet Kaya, Şemsettin Altındal, Ibrahim Uslu. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature[J]. 中国物理B, 2014, 23(4): 47304-047304.

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Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

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