Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/23/4/047201

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 47201-047201.doi: 10.1088/1674-1056/23/4/047201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

于英霞^a, 林兆军^a, 栾崇彪^a, 吕元杰^b, 冯志红^b, 杨铭^a, 王玉堂^a

a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

收稿日期:2013-06-03 修回日期:2013-08-30 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Projected supported by the National Natural Science Foundation of China (Grant No.11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No.20110131110005).

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

Yu Ying-Xia (于英霞)^a, Lin Zhao-Jun (林兆军)^a, Luan Chong-Biao (栾崇彪)^a, Lü Yuan-Jie (吕元杰)^b, Feng Zhi-Hong (冯志红)^b, Yang Ming (杨铭)^a, Wang Yu-Tang (王玉堂)^a

a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2013-06-03 Revised:2013-08-30 Online:2014-04-15 Published:2014-04-15
Contact: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
About author:72.80.Ey; 72.10.-d; 72.20.Fr
Supported by:
Projected supported by the National Natural Science Foundation of China (Grant No.11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No.20110131110005).

摘要/Abstract

摘要： By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm²/V· s for the prepared In_0.18Al_0.82N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

关键词: In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors, channel electric field distribution, polarization Coulomb field scattering, two-dimensional electron gas mobility

Abstract: By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm²/V· s for the prepared In_0.18Al_0.82N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

Key words: In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors, channel electric field distribution, polarization Coulomb field scattering, two-dimensional electron gas mobility

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

72.10.-d (Theory of electronic transport; scattering mechanisms) 72.20.Fr (Low-field transport and mobility; piezoresistance)

于英霞, 林兆军, 栾崇彪, 吕元杰, 冯志红, 杨铭, 王玉堂. Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2014, 23(4): 47201-047201.

Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂). Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors[J]. Chin. Phys. B, 2014, 23(4): 47201-047201.

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

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