中国物理B ›› 2014, Vol. 23 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/23/2/028501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Impact of multiplexed reading scheme on nanocrossbar memristor memory’s scalability

朱玄a b, 唐玉华a b, 吴纯青b, 吴俊杰a b, 易勋a b   

  1. a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
    b School of Computer, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2013-06-04 修回日期:2013-06-27 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61003082).

Impact of multiplexed reading scheme on nanocrossbar memristor memory’s scalability

Zhu Xuan (朱玄)a b, Tang Yu-Hua (唐玉华)a b, Wu Chun-Qing (吴纯青)b, Wu Jun-Jie (吴俊杰)a b, Yi Xun (易勋)a b   

  1. a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
    b School of Computer, National University of Defense Technology, Changsha 410073, China
  • Received:2013-06-04 Revised:2013-06-27 Online:2013-12-12 Published:2013-12-12
  • Contact: Wu Chun-Qing E-mail:wuchunqing@nudt.edu.cn
  • About author:85.40.Bh; 07.50.Ek
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61003082).

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摘要： Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density memory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanocrossbar memory is limited, since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component. In this paper, a multiplexed reading scheme is adopted as the foundation of the discussion. Through HSPICE simulation, we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size. We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory. In order to improve the scalability of the memory, memristors with nonlinear I–V characteristics and high LRS (low resistive state) resistance should be adopted.

关键词: nanocrossbar, memristor, multiplexing, reading circuit, voltage swing

Abstract: Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density memory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanocrossbar memory is limited, since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component. In this paper, a multiplexed reading scheme is adopted as the foundation of the discussion. Through HSPICE simulation, we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size. We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory. In order to improve the scalability of the memory, memristors with nonlinear I–V characteristics and high LRS (low resistive state) resistance should be adopted.

Key words: nanocrossbar, memristor, multiplexing, reading circuit, voltage swing

中图分类号:  (Computer-aided design of microcircuits; layout and modeling)

  • 85.40.Bh
07.50.Ek (Circuits and circuit components)