›› 2014, Vol. 23 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/23/12/128502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

陈海峰   

  1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • 收稿日期:2014-06-05 修回日期:2014-07-17 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Chen Hai-Feng (陈海峰)   

  1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • Received:2014-06-05 Revised:2014-07-17 Online:2014-12-15 Published:2014-12-15
  • Contact: Chen Hai-Feng E-mail:chenhaifeng@xupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

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摘要： Gate-modulated generation–recombination (GMGR) current IGMGR induced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGR curves are ascribed to the changes of the electron density and hole density at the interface, NS and PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients (m and t). The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.

关键词: generation, recombination, interface trap, nMOSFET

Abstract: Gate-modulated generation–recombination (GMGR) current IGMGR induced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGR curves are ascribed to the changes of the electron density and hole density at the interface, NS and PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients (m and t). The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.

Key words: generation, recombination, interface trap, nMOSFET

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices)