A growth kinetics model of rate decomposition for Si1-xGex alloy based on dimer theory

doi:10.1088/1674-1056/23/1/015101

Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 15101-015101.doi: 10.1088/1674-1056/23/1/015101

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇下一篇

A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory

戴显英, 吉瑶, 郝跃

School of Microelectronics, Xidian University, Xi’an 710071, China

收稿日期:2013-03-25 修回日期:2013-06-05 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the State Key Development Program for Basic Research of China (Grant No. 6139801-1).

A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory

Dai Xian-Ying (戴显英), Ji Yao (吉瑶), Hao Yue (郝跃)

School of Microelectronics, Xidian University, Xi’an 710071, China

Received:2013-03-25 Revised:2013-06-05 Online:2013-11-12 Published:2013-11-12
Contact: Ji Yao E-mail:xiaojiaodream@aliyun.com
Supported by:
Project supported by the State Key Development Program for Basic Research of China (Grant No. 6139801-1).

摘要/Abstract

摘要： According to the dimer theory on semiconductor surface and chemical vapor deposition(CVD) growth characteristics of Si_1-xGe_x, two mechanisms of rate decomposition and discrete flow density are proposed. Based on these two mechanisms, the Grove theory and Fick’s first law, a CVD growth kinetics model of Si_1-xGe_x alloy is established. In order to make the model more accurate, two growth control mechanisms of vapor transport and surface reaction are taken into account. The paper also considers the influence of the dimer structure on the growth rate. The results show that the model calculated value is consistent with the experimental values at different temperatures.

关键词: dimer theory, rate decomposition, discrete flow density mechanisms, growth kinetics

Abstract: According to the dimer theory on semiconductor surface and chemical vapor deposition(CVD) growth characteristics of Si_1-xGe_x, two mechanisms of rate decomposition and discrete flow density are proposed. Based on these two mechanisms, the Grove theory and Fick’s first law, a CVD growth kinetics model of Si_1-xGe_x alloy is established. In order to make the model more accurate, two growth control mechanisms of vapor transport and surface reaction are taken into account. The paper also considers the influence of the dimer structure on the growth rate. The results show that the model calculated value is consistent with the experimental values at different temperatures.

Key words: dimer theory, rate decomposition, discrete flow density mechanisms, growth kinetics

中图分类号: (Kinetic and transport theory of gases)

51.10.+y

66.30.je (Diffusion of gases) 68.35.bg (Semiconductors) 68.35.Ja (Surface and interface dynamics and vibrations)

戴显英, 吉瑶, 郝跃. A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory[J]. Chin. Phys. B, 2014, 23(1): 15101-015101.

Dai Xian-Ying (戴显英), Ji Yao (吉瑶), Hao Yue (郝跃). A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory[J]. Chin. Phys. B, 2014, 23(1): 15101-015101.

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A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory

A growth kinetics model of rate decomposition for Si_1-xGe_x alloy based on dimer theory

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