中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98108-098108.doi: 10.1088/1674-1056/22/09/098108
所属专题: TOPICAL REVIEW — Low-dimensional nanostructures and devices
• TOPICAL REVIEW—Low-dimensional nanostructures and devices • 上一篇 下一篇
秦志辉
收稿日期:
2013-06-27
出版日期:
2013-07-26
发布日期:
2013-07-26
基金资助:
Qin Zhi-Hui (秦志辉)
Received:
2013-06-27
Online:
2013-07-26
Published:
2013-07-26
Contact:
Qin Zhi-Hui
E-mail:zhqin@wipm.ac.cn
Supported by:
摘要: The controllable growth of nanostructures with desired geometric order and well-defined shapes has stimulated great interest due to its applicability in the development of microelectronic devices. Self-assembly is an efficient and versatile way to guide the atoms or molecules into low-dimensional nanostructures as a consequence of balancing complex interplay between adsorbate-adsorbate and adsorbate-substrate interfacial interactions. The tailoring of low-dimensional nanostructures by control of inter-adsorbate and adsorbate-substrate interfacial interactions is reviewed. Such inherent interactions greatly influence not only the size and shape of the growing nanostructures, but also their chemical identity. The degree of interaction between adsorbates can be controlled via preparation procedures, opening up the study of the influence of this phenomenon with respect to reactivity and catalytic behavior. The formation of well-defined molecular layers can be controlled not only by repulsive molecule-molecule interaction but also by symmetry matching or charge transfer between adsorbed molecules and the substrate. It has become obvious that inter-adsorbate and adsorbate-substrate interfacial interactions can be tuned to fabricate diverse surface nanostructures from semiconductor, metallic, and molecular materials.
中图分类号: (Nanoscale materials and structures: fabrication and characterization)
秦志辉. Controllable growth of low-dimensional nanostructures on well-defined surfaces[J]. 中国物理B, 2013, 22(9): 98108-098108.
Qin Zhi-Hui (秦志辉). Controllable growth of low-dimensional nanostructures on well-defined surfaces[J]. Chin. Phys. B, 2013, 22(9): 98108-098108.
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