中国物理B ›› 2012, Vol. 21 ›› Issue (9): 98901-098901.doi: 10.1088/1674-1056/21/9/098901

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

SPICE modeling of memristors with multilevel resistance states

方旭东a, 唐玉华b, 吴俊杰a   

  1. a National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China;
    b Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2011-12-30 修回日期:2012-03-08 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062) and the National Natural Science Foundation of China (Grant No. 61003075).

SPICE modeling of memristors with multilevel resistance states

Fang Xu-Dong (方旭东)a, Tang Yu-Hua (唐玉华)b, Wu Jun-Jie (吴俊杰)a   

  1. a National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China;
    b Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
  • Received:2011-12-30 Revised:2012-03-08 Online:2012-08-01 Published:2012-08-01
  • Contact: Fang Xu-Dong E-mail:fangxudong850403@gmail.com
  • Supported by:
    Project supported by the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062) and the National Natural Science Foundation of China (Grant No. 61003075).

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摘要： With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory (RRAM). Memristor's potential to store multiple bits of information as different resistance levels allows its application in multilevel cell (MCL) technology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis (SPICE) modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predicability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.

关键词: memristor, multilevel cell, SPICE model

Abstract: With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory (RRAM). Memristor's potential to store multiple bits of information as different resistance levels allows its application in multilevel cell (MCL) technology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis (SPICE) modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predicability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.

Key words: memristor, multilevel cell, SPICE model

中图分类号:  (Computer science and technology)

  • 89.20.Ff
85.40.Bh (Computer-aided design of microcircuits; layout and modeling) 85.35.-p (Nanoelectronic devices) 84.32.-y (Passive circuit components)