中国物理B ›› 2012, Vol. 21 ›› Issue (9): 98401-098401.doi: 10.1088/1674-1056/21/9/098401
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
杜小锋, 宋三年, 宋志棠, 刘卫丽, 吕士龙, 顾怡峰, 薛维佳, 席韡
Du Xiao-Feng (杜小锋), Song San-Nian (宋三年), Song Zhi-Tang (宋志棠), Liu Wei-Li (刘卫丽), Lü Shi-Long (吕士龙), Gu Yi-Feng (顾怡峰), Xue Wei-Jia (薛维佳), Xi Wei (席韡)
摘要: Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V) and resistance-voltage (R-V) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
中图分类号: (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))