Finite size effect on Raman frequency of phonons in nano-semiconductors

doi:10.1088/1674-1056/21/9/097801

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97801-097801.doi: 10.1088/1674-1056/21/9/097801

Finite size effect on Raman frequency of phonons in nano-semiconductors

夏磊^a, 钟凯^a, 宋阳^a, 陆欣^a, 许旅顺^a, 阎研^a, 李红东^a, 袁方利^b, 蒋建中^c, 俞大鹏^a, 张树霖^a

a School of Physics, Peking University, Beijing 100871, China;
b Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100080, China;
c International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, and State Key Laboratory of Silicon Materials & Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

收稿日期:2012-03-31 修回日期:2012-05-15 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Basic Research Program of China (Grants Nos. 2009CB929403 and 2012CB825700) and the National Natural Science Foundation of China (Grants Nos. 10774006 and 60876002).

Finite size effect on Raman frequency of phonons in nano-semiconductors

Xia Lei (夏磊)^a, Zhong Kai (钟凯)^a, Song Yang (宋阳)^a, Lu Xin (陆欣)^a, Xu Lü-Shun (许旅顺)^a, Yan Yan (阎研)^a, Li Hong-Dong (李红东)^a, Yuan Fang-Li (袁方利)^b, Jiang Jian-Zhong (蒋建中)^c, Yu Da-Peng (俞大鹏)^a, Zhang Shu-Lin (张树霖)^a

a School of Physics, Peking University, Beijing 100871, China;
b Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100080, China;
c International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, and State Key Laboratory of Silicon Materials & Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received:2012-03-31 Revised:2012-05-15 Online:2012-08-01 Published:2012-08-01
Contact: Zhang Shu-Lin E-mail:slzhang@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grants Nos. 2009CB929403 and 2012CB825700) and the National Natural Science Foundation of China (Grants Nos. 10774006 and 60876002).

摘要/Abstract

摘要： A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to be originated from the long-range Fröhlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.

关键词: Raman spectral, finite size effect, nano-semiconductor

Abstract: A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to be originated from the long-range Fröhlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.

Key words: Raman spectral, finite size effect, nano-semiconductor

中图分类号: (Elemental semiconductors and insulators)

78.30.Am

夏磊, 钟凯, 宋阳, 陆欣, 许旅顺, 阎研, 李红东, 袁方利, 蒋建中, 俞大鹏, 张树霖. Finite size effect on Raman frequency of phonons in nano-semiconductors[J]. 中国物理B, 2012, 21(9): 97801-097801.

Xia Lei (夏磊), Zhong Kai (钟凯), Song Yang (宋阳), Lu Xin (陆欣), Xu Lü-Shun (许旅顺), Yan Yan (阎研), Li Hong-Dong (李红东), Yuan Fang-Li (袁方利), Jiang Jian-Zhong (蒋建中), Yu Da-Peng (俞大鹏), Zhang Shu-Lin (张树霖). Finite size effect on Raman frequency of phonons in nano-semiconductors[J]. Chin. Phys. B, 2012, 21(9): 97801-097801.

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Finite size effect on Raman frequency of phonons in nano-semiconductors

Finite size effect on Raman frequency of phonons in nano-semiconductors

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