Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

doi:10.1088/1674-1056/21/9/097301

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/21/9/097301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells

朱俊^a, 班士良^a, 哈斯花^b

a Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;
b Department of Physics, College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China

收稿日期:2012-01-02 修回日期:2012-03-21 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102).

Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells

Zhu Jun (朱俊)^a, Ban Shi-Liang (班士良)^a, Ha Si-Hua (哈斯花)^b

a Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;
b Department of Physics, College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China

Received:2012-01-02 Revised:2012-03-21 Online:2012-08-01 Published:2012-08-01
Contact: Ban Shi-Liang E-mail:slban@imu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102).

摘要/Abstract

摘要： A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In_xGa_1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.

关键词: phonon-assisted intersubband transition, wurtzite quantum well, built-in electric field

Abstract: A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In_xGa_1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.

Key words: phonon-assisted intersubband transition, wurtzite quantum well, built-in electric field

中图分类号: (Quantum wells)

73.21.Fg

72.10.Di (Scattering by phonons, magnons, and other nonlocalized excitations) 77.65.Ly (Strain-induced piezoelectric fields)

朱俊, 班士良, 哈斯花. Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells[J]. 中国物理B, 2012, 21(9): 97301-097301.

Zhu Jun (朱俊), Ban Shi-Liang (班士良), Ha Si-Hua (哈斯花). Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells[J]. Chin. Phys. B, 2012, 21(9): 97301-097301.

参考文献 34

[1]	Bhattacharya P, Zhang X K, Yuan Y, Kamath K K, Klotzkin D, Caneau C and Bhat R J 1998 Proc. SPIE 3283 702
[2]	Bhattacharya P and Ghosh S 2002 Appl. Phys. Lett. 80 3482
[3]	Williams B S 2007 Nature Photonics 1 517
[4]	Wang F, Guo X G and Cao J C 2010 Phys. Rev. B 81 045308
[5]	Chen Z, Tan Z Y, Han Y J, Zhang R, Guo X G, Li H, Cao J C and Liu H C 2011 Electron. Lett. 47 1002
[6]	Duan W H, Zhu J L and Gu B L 1994 Phys. Rev. B 49 14403
[7]	Stroscio M A 1996 J. Appl. Phys. 80 6864
[8]	Shi J J and Pan S H 1995 Phys. Rev. B 51 17681
[9]	Teng H B, Sun J P, Haddad G I, Stroscio M A, Yu S G and Kim K W 1998 J. Appl. Phys. 84 2155
[10]	Shi J J and Pan S H 1996 J. Appl. Phys. 80 3863
[11]	Kisin M V, Dutta M and Stroscio M A 2002 Int. J. High Speed Electron. Syst. 12 939
[12]	Wu B H, Cao J C, Xia G Q and Liu H C 2003 Eur. Phys. J. B 33 9
[13]	Sang H Y, Gu B Y, Wang X H and Chen K Q 2005 Phys. Lett. A 334 55
[14]	Wang X J, Wang L L, Huang W Q, Tang L M, Zou B S and Chen K Q 2006 Semicond. Sci. Technol. 21 751
[15]	Gao X, Botez D and Knezevic I 2008 J. Appl. Phys. 103 073101
[16]	Park S H, Ahn D and Lee Y T 2000 Jpn. J. Appl. Phys. 39 6601
[17]	Vallone M 2002 J. Appl. Phys. 91 9848
[18]	Lepkowski S P, Teisseyre H, Suski T, Perlina P, Grandjean N and Massies J 2001 Appl. Phys. Lett. 79 1483
[19]	Teisseyre H, Suski T, Lepkowski S P, Anceau S, Perlin P, Lefebvre P, Konczewicz L, Hirayama H and Aoyagi Y 2003 Appl. Phys. Lett. 82 1541
[20]	Qu Y and Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese)
[21]	Qu Y and Ban S L 2011 J. Appl. Phys. 110 013722
[22]	Komirenko S M, Kim K W, Stroscio M A and Dutta M 1999 Phys. Rev. B 59 5013
[23]	Lee B C, Kim K W, Stroscio M A and Dutta M 1998 Phys. Rev. B 58 4860
[24]	Shi J J 2003 Phys. Rev. B 68 165335
[25]	Shi J J, Chu X L and Goldys E M 2004 Phys. Rev. B 70 115318
[26]	Li L, Liu D and Shi J J 2005 Eur. Phys. J. B 44 401
[27]	Park S H, Ahn D and Lee Y T 2001 Jpn. J. Appl. Phys. 40 L941
[28]	Pokatilov E P, Nika D L and Balandin A A 2004 J. Appl. Phys. 95 5626
[29]	Komirenko S M, Kim K W, Stroscio M A and Dutta M 2000 Phys. Rev. B 61 2034
[30]	Lü J T and Cao J C 2005 J. Appl. Phys. 97 033502
[31]	Wood C and Jena D 2008 Polarization Effects in Semiconductors (New York: Springer) pp. 42-56
[32]	Tuchman J A and Herman I P 1992 Phys. Rev. B 45 11929
[33]	Guo X G, Tan Z Y, Cao J C and Liu H C 2009 Appl. Phys. Lett. 94 201101
[34]	Wu J Q 2009 J. Appl. Phys. 106 011101

Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells

Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 34

相关文章 3

Metrics

本文评价

推荐阅读 0

[1]	夏超, 宋伟东, 张崇臻, 袁松洋, 胡文晓, 秦萍, 王汝鹏, 赵亮亮, 王幸福, 何苗, 李述体. Alleviating hysteresis and improving device stability of perovskite solar cells via alternate voltage sweeps[J]. 中国物理B, 2017, 26(1): 18401-018401.
[2]	赵凤岐, 张敏, 白金花. Effects of electron-optical phonon interactions on the polaron energy in a wurtzite ZnO/M_xZn_1-xO quantum well[J]. 中国物理B, 2015, 24(9): 97105-097105.
[3]	赵凤岐, 咏梅. Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In_xGa_1-xN/GaN quantum well[J]. 中国物理B, 2012, 21(10): 107103-107103.