Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 126501-126501.doi: 10.1088/1674-1056/21/12/126501

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Enhancing the thermal conductivity of polymer-assisted deposited Al2O3 film by nitrogen doping

黄江, 张胤, 潘泰松, 曾波, 胡国华, 林媛   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-08-04 修回日期:2012-09-10 出版日期:2012-11-01 发布日期:2012-11-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976061 and 11028409).

Enhancing the thermal conductivity of polymer-assisted deposited Al2O3 film by nitrogen doping

Huang Jiang (黄江), Zhang Yin (张胤), Pan Tai-Song (潘泰松), Zeng Bo (曾波), Hu Guo-Hua (胡国华), Lin Yuan (林媛)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-08-04 Revised:2012-09-10 Online:2012-11-01 Published:2012-11-01
  • Contact: Lin Yuan E-mail:linyuan@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976061 and 11028409).

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摘要： Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 (AlON) thin films on Si(100) substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al–N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

关键词: nitrogen-doped Al2O3 thin film, thermal conductivity, polymer-assisted deposition

Abstract: Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 (AlON) thin films on Si(100) substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al–N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

中图分类号:  (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)

  • 65.60.+a
61.25.he (Polymer solutions)