[1] |
Chu J and Sher A 2008 Physics and Properties of Narrow Gap Semiconductors (Berlin: Springer)
|
[2] |
Scheel H J and Fukuda T 2003 Crystal Growth Technology (New York: Wiley)
|
[3] |
Saxen A K 1980 J. Phys. C 13 4323
|
[4] |
Bouarissa N 1998 Phys. Lett. A 245 285
|
[5] |
Mezrag F, Aouina N Y and Bouarissa N 2006 J. Mater. Sci. 41 5323
|
[6] |
Bouarissa N 2001 Mater. Sci. Eng. B 86 53
|
[7] |
Adachi S 1985 J. Appl. Phys. 3 58
|
[8] |
Bouarissa N and Aourag H 1999 Infrared Phys. Technol. 40 343
|
[9] |
Driz M, Badi N, Soudini B, Amrane N, Abid H, Bouarissa N, Khelifa B and Aourag H 1994 Comput. Mater. Sci. 2 287
|
[10] |
Boucenna M and Bouarissa N 2005 Czechoslovak. J. Phys. 55 1
|
[11] |
Boucenna M and Bouarissa N 2004 Mater. Chem. Phys. 84 375
|
[12] |
Bouarissa N and Aourag H 1995 Mater. Sci. Eng. B 33 122
|
[13] |
Saib S, Bouarissa N, Hernandez P R and Munoz A 2007 Eur. Phys. J. B 60 435
|
[14] |
Harrison P 2005 Quantum Wells Wires and Quantum Dots, 2nd edn. Chap. 11 (New York: Wiley)
|
[15] |
Ridley B K 1999 Quantum Processes in Semiconductors, 4th edn. Chap. 1 (Oxford: Clarendon Press)
|
[16] |
Martin R M 2004 Electronic Structure Basic Theory and Practical Methods (Cambridge: Cambridge University Press) p. 204
|
[17] |
Philips J C and Klienman L 1959 Phys. Rev. 116 287
|
[18] |
Cohen M H and Heine V 1961 Phys. Rev. 122 1821
|
[19] |
Austin B J, Heine V and Sham L J 1962 Phys. Rev. 127 276
|
[20] |
Cohen M L and Bergstresser T K 1966 Phys. Rev. 141 780
|
[21] |
Elabsy A M and Elkenany E B 2010 Physica B 405 266
|
[22] |
Elabsy A M, Degheidy A R, Abdelwahed H G and Elkenany E B 2010 Physica B 405 3709
|
[23] |
Paul W 1959 J. Phys. Chem. Solids 8 196
|
[24] |
Zallen R and Paul W 1964 Phys. Rev. 134 A1628
|
[25] |
Samara G A 1983 Phys. Rev. B 27 3494
|
[26] |
Welber B, Cardona M, Kim C K and Rodriguez S 1975 Phys. Rev. B 12 5729
|
[27] |
Tsay Y F, Gong B, Mitra S S and Vetelino J F 1972 Phys. Rev. B 6 2330
|
[28] |
Skelton E F, Radoff P L, Bolsaitis P and Verbalis A 1972 Phys. Rev. B 5 3008
|
[29] |
Walter J P and Cohen M L 1969 Phys. Rev. 183 763
|
[30] |
Adachi S 2005 Properties of Group IV, III-V, and II-VI Semiconductors, Chap. 2 (New York: Wiley)
|
[31] |
Peter Y U and Cardona M 2010 Fundamentals of Semiconductors, Physics and Materials Properties 4th edn. (Berlin: Springer)
|
[32] |
Degheidy A R and Elkenany E B 2011 Semiconductors 45 1251
|
[33] |
Lee H J, Juravel L Y, Woolley J C and Thorpe A J 1980 Phys. Rev. B 21 659
|
[34] |
Bouarissa N and Aourag H 1995 Phys. Status Solidi B 190 227
|
[35] |
Zunger A and Mader K A 1995 Phys. Rev. B 51 10462
|
[36] |
Vegard L 1921 Phys. 5 17
|
[37] |
Nasrallah A, Afia S B, Belmabrouk H and Said M 2005 Eur. Phys. J. B 43 3
|
[38] |
Moss T S 1985 Phys. Status Solidi B 131 415
|
[39] |
Ravindra N M and Srivastava V K 1979 Infrared Phys. 19 603
|
[40] |
Gupta V P and Ravindra N M 1980 Phys. Status Solidi B 100 715
|
[41] |
Herve P J L and Vandamme L K J 1994 Infrared Phys. Technol. 35 609
|
[42] |
Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
|
[43] |
Levinshtein M, Rumyantsev S and Shur M 1996 Handbook Series on Semiconductor Parameters (Singapore: World Scientific )
|
[44] |
Varshni Y P 1967 Physica 34 149
|
[45] |
Aspnes D E, Olson C G and Lynch D W 1976 Phys. Rev. Lett. 37 766
|
[46] |
Adachi S 1987 J. Appl. Phys. 61 4869
|
[47] |
Nag B R 1995 Infrared Phys. Technol. 36 831
|
[48] |
Escalanti L and Hart G L W 2004 Appl. Phys. Lett. 84 5
|