Size and temperature effects on electric properties of CdTe/ZnTe quantum rings

doi:10.1088/1674-1056/20/9/098502

摘要/Abstract

摘要： The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k·p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.

关键词: quantum ring, eight-band k·p model, finite-element method, strain and temperature effects, electronic structure

Abstract: The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k·p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.

Key words: quantum ring, eight-band k·p model, finite-element method, strain and temperature effects, electronic structure

中图分类号: (Optoelectronic device characterization, design, and modeling)

85.60.Bt

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices) 78.20.Bh (Theory, models, and numerical simulation)

Woo-Pyo Hong, Seoung-Hwan Park. Size and temperature effects on electric properties of CdTe/ZnTe quantum rings[J]. 中国物理B, 2011, 20(9): 98502-098502.

Woo-Pyo Hong and Seoung-Hwan Park . Size and temperature effects on electric properties of CdTe/ZnTe quantum rings[J]. Chin. Phys. B, 2011, 20(9): 98502-098502.

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