中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/20/3/037301

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Impurity-related electronic properties in quantum dots under electric and magnetic fields

翟利学1, 刘建军1, 张红2, 王学2, 张春元2   

  1. (1)College of Physics Science and Information Engineering, Hebei Nornal University, Shijiazhuang, Hebei 050016, China; (2)College of Science, Hebei University of Engineering, Handan, Heibei 056038, China
  • 收稿日期:2010-08-22 修回日期:2010-10-19 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10674040) and the Natural Science Foundation of Hebei Province, China (Grant No. A2007000233).

Impurity-related electronic properties in quantum dots under electric and magnetic fields

Zhang Hong(张红)a)†, Zhai Li-Xue(翟利学)b), Wang Xue(王学)a), Zhang Chun-Yuan(张春元)a), and Liu Jian-Jun(刘建军)b)   

  1. a College of Science, Hebei University of Engineering, Handan, Heibei 056038, China; b College of Physics Science and Information Engineering, Hebei Nornal University, Shijiazhuang, Hebei 050016, China
  • Received:2010-08-22 Revised:2010-10-19 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10674040) and the Natural Science Foundation of Hebei Province, China (Grant No. A2007000233).

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摘要： This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields. The quantum dot is modeled by superposing a lateral parabolic potential, a Gaussian potential and the energies are calculated via the finite-difference method within the effective-mass approximation. The variation of the binding energy with the lateral confinement, external field, position of the impurity, and quantum-size is studied in detail. All these factors lead to complicated binding energies of the donor, and the following results are found: (1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement, and reduce with the increasing electric strength and the dot size; (2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction; (3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.

关键词: quantum dot, hydrogenic impurity, binding energy

Abstract: This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields. The quantum dot is modeled by superposing a lateral parabolic potential, a Gaussian potential and the energies are calculated via the finite-difference method within the effective-mass approximation. The variation of the binding energy with the lateral confinement, external field, position of the impurity, and quantum-size is studied in detail. All these factors lead to complicated binding energies of the donor, and the following results are found: (1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement, and reduce with the increasing electric strength and the dot size; (2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction; (3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.

Key words: quantum dot, hydrogenic impurity, binding energy

中图分类号:  (Impurity and defect levels; energy states of adsorbed species)

  • 73.20.Hb
73.21.La (Quantum dots) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)