An interconnect width and spacing optimization model considering scattering effect

doi:10.1088/1674-1056/19/9/097803

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97803-097803.doi: 10.1088/1674-1056/19/9/097803

An interconnect width and spacing optimization model considering scattering effect

朱樟明, 万达经, 杨银堂

School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2009-11-29 修回日期:2010-01-22 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60971066), the National High-tech Program (Grant Nos. 2009AA01Z258 and 2009AA01Z260), and the National Key Lab Foundation (Grant No. ZHD200904).

An interconnect width and spacing optimization model considering scattering effect

Zhu Zhang-Ming(朱樟明), Wan Da-Jing(万达经), and Yang Yin-Tang(杨银堂)

School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2009-11-29 Revised:2010-01-22 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60971066), the National High-tech Program (Grant Nos. 2009AA01Z258 and 2009AA01Z260), and the National Key Lab Foundation (Grant No. ZHD200904).

摘要/Abstract

摘要： As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.

Abstract: As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.

Key words: scattering effect, curve fitting, interconnection line dimensions, nanometer integrated circuits

中图分类号:

7850G

朱樟明, 万达经, 杨银堂. An interconnect width and spacing optimization model considering scattering effect[J]. 中国物理B, 2010, 19(9): 97803-097803.

Zhu Zhang-Ming(朱樟明), Wan Da-Jing(万达经), and Yang Yin-Tang(杨银堂). An interconnect width and spacing optimization model considering scattering effect[J]. Chin. Phys. B, 2010, 19(9): 97803-097803.

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An interconnect width and spacing optimization model considering scattering effect

An interconnect width and spacing optimization model considering scattering effect

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