Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

doi:10.1088/1674-1056/19/9/097802

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97802-097802.doi: 10.1088/1674-1056/19/9/097802

Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

程萍, 张玉明, 张义门, 郭辉

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-01-12 修回日期:2010-03-26 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60876061), Pre-Research Foundation (Grant No. 9140A08050508), and the 13115 Innovation Engineering of Shanxi, China (Grant No. 2008ZDKG-30).

Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

Cheng Ping(程萍)^†, Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), and Guo Hui(郭辉)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-01-12 Revised:2010-03-26 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60876061), Pre-Research Foundation (Grant No. 9140A08050508), and the 13115 Innovation Engineering of Shanxi, China (Grant No. 2008ZDKG-30).

摘要/Abstract

摘要： With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process.

Abstract: With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process.

Key words: intrinsic defects, annealing time, low temperature photoluminescence, electron spin resonance

中图分类号:

7850

程萍, 张玉明, 张义门, 郭辉. Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC[J]. 中国物理B, 2010, 19(9): 97802-097802.

Cheng Ping(程萍), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), and Guo Hui(郭辉). Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC[J]. Chin. Phys. B, 2010, 19(9): 97802-097802.

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Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

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