Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

doi:10.1088/1674-1056/19/9/097106

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97106-097106.doi: 10.1088/1674-1056/19/9/097106

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

王守国¹, 张义门², 张玉明²

(1)School of Information Science and Technology, Northwest University, Xi'an 710127, China; (2)School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-01-03 修回日期:2010-02-20 出版日期:2010-09-15 发布日期:2010-09-15

Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

Wang Shou-Guo(王守国)^a)^†, Zhang Yi-Men(张义门)^b), and Zhang Yu-Ming(张玉明)^b)

^a School of Information Science and Technology, Northwest University, Xi'an 710127, China; ^b School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-01-03 Revised:2010-02-20 Online:2010-09-15 Published:2010-09-15

摘要/Abstract

摘要： From the theoretical analysis of the thermionic emission model of current--voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal--semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.

Abstract: From the theoretical analysis of the thermionic emission model of current–voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal–semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.

Key words: silicon carbide, interface states, ion-implantation, barrier height

中图分类号:

7155D

王守国, 张义门, 张玉明. Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors[J]. 中国物理B, 2010, 19(9): 97106-097106.

Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明). Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors[J]. Chin. Phys. B, 2010, 19(9): 97106-097106.

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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

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