中国物理B ›› 2010, Vol. 19 ›› Issue (2): 27502-027502.doi: 10.1088/1674-1056/19/2/027502

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Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

陆智海1, 张凤鸣1, 刘兴翀2   

  1. (1)Department of Physics, Nanjing University, Nanjing 210093, China; (2)School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2008-12-05 修回日期:2009-04-01 出版日期:2010-02-15 发布日期:2010-02-15
  • 基金资助:
    Project supported by the National Key Program for Fundamental Research Development Plan of China (973 Project).

Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

Liu Xing-Chong(刘兴翀)a)†, Lu Zhi-Hai(陆智海)b), and Zhang Feng-Ming(张凤鸣)b)   

  1. a Institute of High Energy Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2008-12-05 Revised:2009-04-01 Online:2010-02-15 Published:2010-02-15
  • Supported by:
    Project supported by the National Key Program for Fundamental Research Development Plan of China (973 Project).

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摘要： This paper reports that Zn0.97Mn0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (Tc) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn0.97Mn0.03O films is strongly related to the defects in the films.

Abstract: This paper reports that Zn0.97Mn0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (Tc) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn0.97Mn0.03O films is strongly related to the defects in the films.

Key words: magnetic semiconductor, ZnO, photoluminescence

中图分类号:  (Magnetic properties of monolayers and thin films)

  • 75.70.Ak
81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.50.Pp (Magnetic semiconductors) 78.55.Et (II-VI semiconductors)