Atomic diffusion in annealed Cu/SiO2/Si (100) system prepared by magnetron sputtering

doi:10.1088/1674-1056/19/2/026601

中国物理B ›› 2010, Vol. 19 ›› Issue (2): 26601-026601.doi: 10.1088/1674-1056/19/2/026601

Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering

贾艳辉¹, 李公平¹, 陈熙萌¹, 曹博²

(1)School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China; (2)School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China

收稿日期:2008-10-07 修回日期:2009-08-04 出版日期:2010-02-15 发布日期:2010-02-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10375028).

Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering

Cao Bo(曹博)^a)b), Jia Yan-Hui(贾艳辉)^a), Li Gong-Ping(李公平)^a)^†, and Chen Xi-Meng(陈熙萌)^a)

^a School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China; ^b School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China

Received:2008-10-07 Revised:2009-08-04 Online:2010-02-15 Published:2010-02-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10375028).

摘要/Abstract

摘要： Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO₂/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO₂/Si(100) is 350~℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO₂/Si (100) systems copper silicides are not formed below an annealing temperature of 350~℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450~℃.

Abstract: Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO₂/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO₂/Si(100) is 350 ℃. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO₂/Si (100) systems copper silicides are not formed below an annealing temperature of 350 ℃. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450 ℃.

Key words: diffusion, interface reaction, copper silicides

中图分类号: (Chemical interdiffusion; diffusion barriers)

66.30.Ny

81.15.Cd (Deposition by sputtering) 68.55.A- (Nucleation and growth) 82.65.+r (Surface and interface chemistry; heterogeneous catalysis at surfaces) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

曹博, 贾艳辉, 李公平, 陈熙萌. Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering[J]. 中国物理B, 2010, 19(2): 26601-026601.

Cao Bo(曹博), Jia Yan-Hui(贾艳辉), Li Gong-Ping(李公平), and Chen Xi-Meng(陈熙萌). Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering[J]. Chin. Phys. B, 2010, 19(2): 26601-026601.

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Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering

Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering

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