中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1389-1393.doi: 10.1088/1674-1056/17/4/039

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Current--voltage characteristics of an individual helical CdS nanowire rope

陈兆甲1, 金爱子1, 顾长志1, 王文龙2, 白凤莲2, 龙云泽3   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China; (3)College of Physics Science, Qingdao University, Qingdao 266071, China
  • 收稿日期:2007-08-26 修回日期:2007-09-27 出版日期:2008-04-20 发布日期:2008-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10604038) and Program for New Century Excellent Talents in University, China (Grant No NCE72007).

Current--voltage characteristics of an individual helical CdS nanowire rope

Long Yun-Ze(龙云泽)a)†, Wang Wen-Long(王文龙)b), Bai Feng-Lian(白凤莲)b), Chen Zhao-Jia(陈兆甲)c), Jin Ai-Zi(金爱子)c), and Gu Chang-Zhi(顾长志)c)   

  1. a College of Physics Science, Qingdao University, Qingdao 266071, China; b Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China; c Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2007-08-26 Revised:2007-09-27 Online:2008-04-20 Published:2008-04-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10604038) and Program for New Century Excellent Talents in University, China (Grant No NCE72007).

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摘要： This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current--voltage ($I-V$) characteristics are nonlinear from 300 down to 60\,K. Some step-like structures in the $I-V$ curves and oscillation peaks in the differential conductance (d$I$/d$V-V$) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6--10\,nm.

关键词: nanowires, CdS, $I-V$ characteristics, Coulomb blockade

Abstract: This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current--voltage ($I-V$) characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the $I-V$ curves and oscillation peaks in the differential conductance (d$I$/d$V-V$) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6--10 nm.

Key words: nanowires, CdS, $I-V$ characteristics, Coulomb blockade

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
72.80.Ey (III-V and II-VI semiconductors) 73.23.Hk (Coulomb blockade; single-electron tunneling) 73.63.Nm (Quantum wires)