中国物理B ›› 2003, Vol. 12 ›› Issue (2): 218-221.doi: 10.1088/1009-1963/12/2/318

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

周大勇, 澜清, 孔云川, 苗振华, 封松林, 牛智川   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2002-05-16 修回日期:2002-07-08 出版日期:2005-03-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the National Science Foundation of China (Grant Nos 60176006 and 60025410) and by the Nano Science and Technology Project of Chinese Academy of Sciences.

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

Zhou Da-Yong (周大勇), Lan Qing (澜清), Kong Yun-Chuan (孔云川), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川)   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2002-05-16 Revised:2002-07-08 Online:2005-03-16 Published:2005-03-16
  • Supported by:
    Project supported by the National Science Foundation of China (Grant Nos 60176006 and 60025410) and by the Nano Science and Technology Project of Chinese Academy of Sciences.

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摘要： Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

Abstract: Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

Key words: molecular beam epitaxy (MBE) step bunching, InGaAs, quantum wire

中图分类号:  (Quantum wires)

  • 81.07.Vb
81.16.-c (Methods of micro- and nanofabrication and processing)